Abstract:The electroluminescence (EL) at room temperature from Au-extra-thin silicon oxynitride (ETSON)-p-Si and Au-ETSON-n-Si structures is reported. The ETSON films (similar to 80 Angstrom) were deposited by the rf magnetron sputtering technique, and Si3N4-Si composite targets were used (the area ratio of Si to Si3N4 was similar to 6%). The EL spectra were measured under forward bias greater than or equal to 4 V after the ETSON films had been annealed at 300, 600, 800, and 1000 degrees C in N-2 ambient for 30 min. The Au-ETSON-p-Si structure has a dominant EL band with peak wavelength around 680 nm, and its integrated EL efficiency is an order of magnitude higher than that from a Au-extra-thin Si-rich SiO2 (ETSSO) film (similar to 80 Angstrom)-p-Si structure. Distinguishing it from the Au-ETSSO-Si structure, which emits visible EL only when it is fabricated on p-Si, EL can also be observed in the Au-ETSON-n-Si structure under forward bias, and the two dominant EL bands peak one at around 700 nm and one at around 800 nm. Electron beam irradiation induces a new EL band peaked at 500 nm in the EL spectrum from an Au-ETSON-p-Si structure. From the experimental results it is suggested that electrons and holes from opposite sides tunnel into the ETSON layer and recombine radiatively at luminescence centres there.

Electroluminescence from Au/extra-thin Si-rich SiO2 film/n+-Si under reverse biases and its mechanism

Electroluminescence from Au Native Silicon Oxide Layer P(+)-Si and Au Native Silicon Oxide Layer N(+)-Si Structures under Reverse Biases

ELECTROLUMINESCENCE FROM NANOSCALE Si-PARTICLES EMBEDDED SiO2 FILMS DEPOSITED ON n+-Si AND p-Si SUBSTRATES

Electroluminescence from Semitransparent Au Film/nanometer SiO2/nanometer Si/nanometer SiO2/n+–Si Structure under Reverse Bias

Electroluminescence from an Au-Extra-Thin Silicon Oxynitride Film Si Structure

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Visible Electroluminescence from Semitransparent Au Film/extra Thin Si-rich Silicon Oxide Film/p-Si Structure

Fairly pure ultraviolet electroluminescence from p-Si-based SiOx/ZnO/SiOx double-barrier device

Electroluminescence from Au/(SiO2/Si/SiO2) Nanometer Double Barrier/p-Si Structures and Its Mechanism

Electroluminescence Spectra Study of Au/Si/SiO2 Superlattice/p‐si Structures with Gamma Irradiation

ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2)NANOSCALE DOUBLE-BARRIER/n+-Si STRUCTURE

Effects of chemical composition of Si oxynitride on electroluminescence from semitransparent Au/extra thin Si oxynitride film/ p-Si structures

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Electroluminescence from Semitransparent Au Film/Sio2/(Amorphous-Si/Sio2) Superlattice/P-Si Structure

Evolution From Random Lasing To Erbium-Related Electroluminescence From Metal-Insulator-Semiconductor Structured Light-Emitting Device With Erbium-Doped Zno Film On Silicon

Electrophotoluminescence of Zno Film

Electroluminescence from Tio2/P(+)-Si Heterostructure

Electroluminescence of SnO2∕p-Si heterojunction

Electroluminescence from Au/native oxide/p-Si and its correlation to that from Au/porous Si

Electroluminescence from Au/extra thin nanosize Ge particles embedded silicon oxide film/p-Si and Au/extra thin nanosize Si particles embedded silicon oxide film/p-Si

Electroluminescence from Silicon-based Zn_2SiO_4:ZnO Films