Abstract:The electroluminescence (EL) at room temperature from Au-extra-thin silicon oxynitride (ETSON)-p-Si and Au-ETSON-n-Si structures is reported. The ETSON films (similar to 80 Angstrom) were deposited by the rf magnetron sputtering technique, and Si3N4-Si composite targets were used (the area ratio of Si to Si3N4 was similar to 6%). The EL spectra were measured under forward bias greater than or equal to 4 V after the ETSON films had been annealed at 300, 600, 800, and 1000 degrees C in N-2 ambient for 30 min. The Au-ETSON-p-Si structure has a dominant EL band with peak wavelength around 680 nm, and its integrated EL efficiency is an order of magnitude higher than that from a Au-extra-thin Si-rich SiO2 (ETSSO) film (similar to 80 Angstrom)-p-Si structure. Distinguishing it from the Au-ETSSO-Si structure, which emits visible EL only when it is fabricated on p-Si, EL can also be observed in the Au-ETSON-n-Si structure under forward bias, and the two dominant EL bands peak one at around 700 nm and one at around 800 nm. Electron beam irradiation induces a new EL band peaked at 500 nm in the EL spectrum from an Au-ETSON-p-Si structure. From the experimental results it is suggested that electrons and holes from opposite sides tunnel into the ETSON layer and recombine radiatively at luminescence centres there.

Effects of chemical composition of Si oxynitride on electroluminescence from semitransparent Au/extra thin Si oxynitride film/ p-Si structures

Electroluminescence from Au/Si Oxynitride Film/si Structures with the Films Having Different Chemical Compositions

Electroluminescence from an Au-Extra-Thin Silicon Oxynitride Film Si Structure

Electroluminescence from Si/Si Oxynitride Superlattices

Synchronized Swinging of Electroluminescence Intensity and Peak Wavelength with Si Layer Thickness in Au/SiO2/nanometer Si/SiO2/p-Si Structures

Electroluminescence from Au/Si Nitride Film/si with the Film Prepared by Electron Cyclotron Resonance Method

Visible Electroluminescence from Semitransparent Au Film/extra Thin Si-rich Silicon Oxide Film/p-Si Structure

Effects of Doping Al into SiO2 on Electroluminescence from Au/Nanometer (SiO2/Si/ SiO2)/p-Si Structure

Effects of Si Content on the Optical and Electrical Properties of SiOx Films

Electroluminescence Spectra Study of Au/Si/SiO2 Superlattice/p‐si Structures with Gamma Irradiation

Effects of Ag Nanocrystals on Electroluminescence in Si Oxide Films

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Gamma-Ray Irradiation Effects on Electroluminescence from Au/Extra Thin Si-Rich SiO2 Film/p-Si Structures

Electroluminescence from Au/extra thin nanosize Ge particles embedded silicon oxide film/p-Si and Au/extra thin nanosize Si particles embedded silicon oxide film/p-Si

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2)NANOSCALE DOUBLE-BARRIER/n+-Si STRUCTURE

Electroluminescence from amorphous SiSiO2 superlattices

Gamma-Ray Irradiation Effects On Electroluminescence From Au Extra Thin Si-Rich Sio2 Film/P-Si Structures

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Room-Temperature 1.54-Mu M Electroluminescence From The Au/Nanometer (Sio2 : Er/Si/Sio2 : Er)/N(+)-Si Structure

4 MeV Electron Irradiation Effect on Electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si Structures