Gamma-Ray Irradiation Effects On Electroluminescence From Au Extra Thin Si-Rich Sio2 Film/P-Si Structures

An-ping Li,Bo-rui Zhang,Yong-ping Qiao,Guo-gang Qin,Zhen-chang Ma,Wan-hua Zong
DOI: https://doi.org/10.1088/0256-307X/15/4/025
1998-01-01
Chinese Physics Letters
Abstract:We have studied the effects of gamma-ray irradiation on electroluminescence (EL) from Au/extra thin Si-rich SiO2 film/p-Si Structures. After gamma-ray irradiation, for the structure with a 600 degrees C annealed Si-rich SiO2 him a new blue EL band with a peak at around 480 nm was observed, and for the structure with a 300 degrees C annealed Si-rich SiO2 film the red EL band shifts from 670 to 660 nm and its intensity and full width at half maximum increase pronouncedly. The experimental results demonstrate that the defects induced by gamma-ray irradiation are responsible for the blue EL band as well as for the variations of the red EL band.
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