Abstract:SiO2:Si:Er films were deposited on n+-Si substrate using the magnetron sputtering technique, and then Au/ SiO2: Si:Er /n+-Si diodes were fabricated. Both Er3+ photoluminescence (PL) from the SiO2: Si: Er/n+-Si and electroluminescence (EL) from the Au/SiO2: Si: Er /n+-Si diodes were studied. The 1.54 micrometers PL intensity ratio of SiO2: Si: Er/n+-Si to that of the SiO2: Er/n+-Si measured under identical conditions can be as large as ~30. While the 1.54 micrometers EL intensity ratio of an Au/ SiO2:Si:Er/n+-Si diode to that of an Au/SiO2:Er/n+-Si diode measured under identical conditions can be as large as 6. We also deposited nanoscale (SiO2:Er/Si(1.0~4.0nm)/SiO2:Er) sandwich structure, in which the silicon layer between the two SiO2:Er barriers was 1.0~4.0 nm thick with an interval of 0.2 nm, on both n+-Si and p-Si substrates. Each EL spectrum of the Au/nanoscale (SiO2:Er/Si/SiO2:Er)/n+-Si diodes can be fitted by three Gaussian bands with peak energies of 0.757 eV (1.64 micrometers ), 0.806 eV (1.54 micrometers ) and 0.860 eV (1.44 micrometers ), and full widths at half maximum of 0.052, 0.045 and 0.055 eV, respectively. Among the Au/nanoscale (SiO2:Er/Si/SiO2:Er)/n+-Si diodes with the Si layers having various thicknesses, the EL intensities of the 1.64, 1.54 and 1.44 micrometers bands of the diode with a 1.6 nm Si layer attain maxima which are 22, 8 and 7 times larger than those of the control diode without any Si layer (Au/nanoscale SiO2:Er/n+-Si), respectively.

Effects of Si, Ge and Ar Ion-Implantation on EL from Au/Si-rich SiO2/p-Si Structure

Electroluminescence of Si,Ge and Ar IOn-Implanted Si-Rich SiO2

4 MeV Electron Irradiation Effect on Electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si Structures

Electrically Confined Aperture Formed by Ion Implantation and Its Effect on Device Optoelectronic Characteristics

Gamma-Ray Irradiation Effects on Electroluminescence from Au/Extra Thin Si-Rich SiO2 Film/p-Si Structures

Effects of chemical composition of Si oxynitride on electroluminescence from semitransparent Au/extra thin Si oxynitride film/ p-Si structures

Electroluminescence from Au/(SiO2/Si/SiO2) Nanometer Double Barrier/p-Si Structures and Its Mechanism

Effects of Doping Al into SiO2 on Electroluminescence from Au/Nanometer (SiO2/Si/ SiO2)/p-Si Structure

Gamma-Ray Irradiation Effects On Electroluminescence From Au Extra Thin Si-Rich Sio2 Film/P-Si Structures

Room-temperature 1.54 Μm Electroluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited on N+-Si Substrates by Magnetron Sputtering

Visible Electroluminescence from Semitransparent Au Film/extra Thin Si-rich Silicon Oxide Film/p-Si Structure

Electroluminescence Spectra Study of Au/Si/SiO2 Superlattice/p‐si Structures with Gamma Irradiation

Electroluminescence from an Au-Extra-Thin Silicon Oxynitride Film Si Structure

Electroluminescence from Semitransparent Au Film/Sio2/(Amorphous-Si/Sio2) Superlattice/P-Si Structure

Room-Temperature 1.54-Mu M Electroluminescence From The Au/Nanometer (Sio2 : Er/Si/Sio2 : Er)/N(+)-Si Structure

Si-ion implantation-induced luminescence from Si single crystals with a SiO2 overlayer

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2)NANOSCALE DOUBLE-BARRIER/n+-Si STRUCTURE

Room-temperature 1.54-μm electroluminescence from Er-doped Si-rich SiO2 films deposited on p-Si by magnetron sputtering

Room-temperature Luminescence at 1.54 Μm and Other Wavelengths from Er-doped Si-rich Si Oxide

Luminescence from Si/SiO 2 with Si Implantation