Abstract:Compared with conventional light-emitting diode (LED), micro-LED has excellent photo-electric properties such as high current density, light output power density, light response frequency. It has widespread application prospects in the field of light display, optical tweezers, and visible light communication. However, dry etching inevitably leads the sidewall to be damaged, which results in the degradation of device properties. In this letter, a micro-LED array device based on F ions implantation isolation technology is presented to avoid damaging the sidewall. We systemically investigate the influence of fluorine ion implantation energy and light-emitting apertures on the photoelectric properties of the micro-LED array device by testing the current-voltage characteristic and light output power. The investigation results show that comparing with F ion 50 keV single implantation device, the reverse leakage of 50/100 keV double implantation device decreases by 8.4 times and the optical output density increases by 1.3 times. When the light-emitting apertures are different (6, 8, 10 μm respectively), the reverse leakage current remains constant, and the forward operating voltage decreasesfrom 3.3 V to 3.1 V and to 2.9 V with the increase of the aperture. Besides, the available area ratio, i.e. the ratio of actual light-emitting area to device area of single micro-LED with different light-emitting apertures are 85%, 87%, and 92%, respectively. The electrical isolation of the micro-LED array is realized by ion implantation isolation technology, and the micro-LED has some advantages over the conventional mesa etching micro-LED device, such as low reverse leakage current density, high optical output power density, and high effective light-emitting area ratio.

Electrically Confined Aperture Formed by Ion Implantation and Its Effect on Device Optoelectronic Characteristics

Ion implantation in 1.3μm VCSEL structure

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Structural and Luminescent Properties of Electron-Irradiated Silicon

Defect-Related Electroluminescence in the 1.2–1.7 Μm Range from Boron-Implanted Silicon at Room Temperature

Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical-Cavity Surface-Emitting Lasers

Ion implantation isolation based micro-light-emitting diode device array properties

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Electroluminescence from Metal-Oxide-semiconductor Devices with Erbium-Doped CeO2 Films on Silicon

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Effects of Si, Ge and Ar Ion-Implantation on EL from Au/Si-rich SiO2/p-Si Structure

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Enhancement of Electroluminescence from Tio2/P(+)-Si Heterostructure-Based Devices Through Engineering of Oxygen Vacancies in Tio2

A Thermal Analysis of the Operation of Microscale, Inorganic Light-Emitting Diodes

Evolution of Electroluminescence from Multiple Si-Implanted Silicon Nitride Films with Thermal Annealing

Porous Structures and Short-Wavelength Photoluminescence of C + -Implanted SiO 2 Films

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Transmission Electron Microscopy and Spectroscopic Ellipsometry Studies of Damage Layer Induced by Large Tilt Angle Ion Implantation