A High Power InGaAs/GaAsP Vertical-Cavity Surface-Emitting Laser and Its Temperature Characteristics
CL Yan,YQ Ning,L Qin,SM Zhang,Q Wang,LM Zhao,ZH Jin,YF Sun,GT Tao,Y Liu,GQ Chu,LJ Wang,HL Jiang
DOI: https://doi.org/10.1088/0268-1242/19/6/004
IF: 2.048
2004-01-01
Semiconductor Science and Technology
Abstract:A high power bottom-emitting InGaAs/GaAsP vertical-cavity surface-emitting laser with a large aperture (400 mum diameter) is described. The device has been fabricated by using oxidation confinement technology. The device threshold current is 6 10 mA, and the maximum output power is up to the watt regime (1.42 W) at room temperature (24 degreesC) with a pulse condition (pulse width of 50 mus, repetition rate of 1 kHz). The maximum continuous wave optical output power at room temperature is as high as 1.09 W. The lasing peak wavelength is 987 nm, the full width at half-maximum is 0.9 nm, and the far-field divergence angle is below 10degrees. The temperature characteristics of the device are also obtained. A special temperature dependence of the threshold current in the vertical-cavity surface-emitting laser structure is observed; the characteristic temperature T-0 is over 220 K, and the wavelength shift with temperature is only about 0.06 nm K-1.