Abstract:In this study, Al implantation in 4H-SiC at the dose of 1 × 10 14 cm −2 was investigated. The impacts of implantation temperature on the lattice quality, microstructure, surface composition, and band structure were all studied experimentally and theoretically. Atomic force microscope (AFM) images showed the difference in surface morphology between high-temperature and low-temperature implantation. Transmission electron microscopy (TEM) characterization indicated the lattice damage induced by implantation was recovered after the post-annealing at 1750 °C, except for the samples implanted at room temperature. X-ray photoelectron spectroscopy (XPS) analysis suggested an oxidation effect during and after the implantation process, and it was more serious at lower implantation temperatures. As the implantation temperature incremented, the ratio of Si-C composition with high binding energy increased, the element valence became closer to that of ideal Al-doped 4H-SiC calculated by density functional theory (DFT); and the Fermi level shifted toward the valence band maximum (VBM), demonstrating the formation of efficient p-type doping. A more obvious asymmetric broadening in Raman spectroscopy was observed at higher implantation temperature. The theoretically obtained band structures and bond lengths from DFT calculations corroborated the experimental results, providing physical insights into the possible effect mechanism. In sum, correlations between the implantation process, external material properties, and internal crystal structure were recorded, paving the way for further research and future applications.

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Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Retention And Thermal Release Behavior Of Deuterium And Helium Implanted In Sic

Insights into High-Dose Helium Implantation of Silicon

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation

Experimental study on the thermal evolution of silicon defects with zonal characteristics induced by precisely localized irradiation of focused helium ion beams

Vacancy Effects on the Formation of He and Kr Cavities in 3C-Sic Irradiated and Annealed at Elevated Temperatures

Thermal behavior of iron in 6H-SiC: Influence of He-induced defects

Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC

The effects of helium, strontium, and silver triple ions implanted into SiC

Al-implantation induced damage in 4H-SiC

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Optical and Structural Properties of 6h–sic Irradiated by Coimplantation

Ion Irradiation Induced Bubble Relaxation in SiC

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 °C

Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing