Abstract:The root mean square (rms) surface roughness extracted from atomic force microscopy is widely employed to complement the characterisation of ion implantation processes in 4H-SiC. It is known that the protection of a carbon film eliminates or mitigates roughening of the SiC surface during postimplantation annealing. This study, based on a rich original data collection of Al+ ion implanted 4H-SiC samples, allows for a quantitative description of the surface morphology as a function of the annealing temperature and time and of the Al implanted concentration. With increasing thermal budget, the evolution from flat, to blurred with ripples, granular, and finally jagged surface, results in a monotonous increase in the root mean square roughness. Additional information is given by the trends of the roughness exponent and of the correlation length, extracted from the height-height correlation function, which account for the surface evolution below 1700°C and for the effect of the Al implanted concentration on the ripple size, respectively. A combination of low roughness parameter and high correlation length identify the transition from ripples to jagged morphology. LAY DESCRIPTION: Selective area doping is a key step in the fabrication of hexagonal Silicon Carbide (4H-SiC) power electronic devices. It is achieved by ion implantation followed by a high temperature postimplantation annealing to restore the lattice and electrically activate the dopants. Aluminium, the preferred p-type dopant, is electrically activated at temperature ranging between 1500°C and 2000°C. The time required to complete the activation process is longer the lower the annealing temperature, spanning between some minutes and hundreds of hours. During annealing, 4H-SiC wafers are encapsulated by a temperature-resistant carbon layer (C-cap) in order to avoid step bunching and reduce surface roughening. Nevertheless, surface modifications can occur at high temperature. For this reason, the characterisations of 4H-SiC doping processes report not only the electrical activation of the dopants, but also the root mean square surface roughness obtained at the end of the process. However, rms values can be scattered because technological parameters such as the heating system and the way to deposit and remove the C-cap can affect the final result as well as the process parameters. Furthermore, the C-cap resistance to long annealing has been proven only by electrical measurements, but the surface morphology has never been observed. This work presents a quantitative characterisation of the surface morphology of Al implanted 4H-SiC as a function of the annealing temperature, time and of the Al implanted concentration, independent of the heating system and of the C-cap technology. The produced sample collection allowed to correlate characteristic surface features with the corresponding quantities extracted from image analysis that can be more sensitive to process parameters than the sole rms. These findings can be used to enrich process optimisation tools.

Al-implantation induced damage in 4H-SiC

Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC

4H-SiC surface morphology after Al ion implantation and annealing with C-cap

Influence of a thin amorphous surface layer on de-channeling during aluminum implantation at different temperatures into 4H-SiC

Optical Characterization of Ion-Implanted 4H-SiC

Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide

A Multiscale Simulation on Aluminum Ion Implantation-Induced Defects in 4H-SiC MOSFETs

Optical Properties Revealing Annealing Behavior of High-Temperature He-Implantation Induced Defects in Silicon Carbide

Evolution of secondary defects in arsenic implanted Si

Surface roughening in ion implanted 4H-silicon carbide

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer

On the nature of ion implantation induced dislocation loops in 4H-silicon carbide

Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Atomistic Analysis on Implantation Effects of Hydrogen Ions and Copper Ions into 4H-Sic

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Temperature-Dependence of Aluminum Implanted 4H-SiC After High-Temperature Annealing

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

H-ion Irradiation-induced Annealing in He-ion Implanted 4H-Sic

Lateral spreads of ion-implanted Al and P atoms in silicon carbide

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic