Abstract:Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H+ implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 1016, 1 × 1017, or 2 × 1017 ion/cm2, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 1016 O atoms/cm2 situated at a depth close to that of the peak of the implanted H+. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its presence in the irradiation-damaged films.

Insights into High-Dose Helium Implantation of Silicon

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Retention And Thermal Release Behavior Of Deuterium And Helium Implanted In Sic

Study of Surface Morphology in GaAs by Hydrogen and Helium Implantation at Elevated Temperature

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Study of damage generation induced by focused helium ion beam in silicon

Microstructure evolution and performance degradation of sol-gel silica films induced by helium ion irradiation

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Impact of Helium Ion Implantation Dose and Annealing on Dense Near-Surface Layers of NV Centers

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

Orientation-dependent indentation response of helium-implanted tungsten

Al-implantation induced damage in 4H-SiC

Evolution of secondary defects in arsenic implanted Si

The effects of helium, strontium, and silver triple ions implanted into SiC

Surface roughening in ion implanted 4H-silicon carbide

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 °C

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

Ion-irradiation-induced athermal annealing of helium bubbles in SiC