Abstract:Diffusion and segregation behavior of hydrogen and oxygen in silicon carbide subjected to H implantation and subsequent annealing were studied with a number of analytical techniques including Secondary Ion Mass Spectrometry (SIMS), Rutherford backscattering spectrometry in channeling geometry, field emission scanning electron microscopy, optical microscopy, cross-sectional transmission electron microscopy, and atomic force microscopy. H+ implantation was carried out with energies of 200 keV, 500 keV, or 1 MeV to doses of 1 × 1016, 1 × 1017, or 2 × 1017 ion/cm2, and thermal treatment was conducted in flowing argon for 1 to 2 h at temperatures of 740, 780, 1000, or 1100 °C. The process of migration and eventual loss of hydrogen in a point defect regime is postulated to proceed to a large extent through ionized vacancies. This conclusion was derived from the observed substantial difference in H mobilities in n- vs. p-type SiC as the population of ionized vacancies is governed by the Fermi-Dirac statistics, i.e., the position of the Fermi level. For higher doses, a well defined buried planar zone forms in SiC at the maximum of deposited energy, comprising numerous microvoids and platelets that are trapping sites for hydrogen atoms. At a certain temperature, a more or less complete exfoliation of the implanted layer is observed. For a 1 MeV implant heated to 1100 °C in nominally pure argon, SIMS profiling reveals a considerable oxygen peak of 1016 O atoms/cm2 situated at a depth close to that of the peak of the implanted H+. Similarly, 1100 °C annealing of a 200 keV implant induces the formation of a thin oxide (4 nm), located at the interface between the implanted layer and the substrate as evidenced by both SIMS and HRTEM. The measurements were taken on the part of the sample that remained un-exfoliated. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, further investigation is under way to elucidate its presence in the irradiation-damaged films.

Retention And Thermal Release Behavior Of Deuterium And Helium Implanted In Sic

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Insights into High-Dose Helium Implantation of Silicon

The effects of helium, strontium, and silver triple ions implanted into SiC

Diffusion and impurity segregation in hydrogen-implanted silicon carbide

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic

Optical and Structural Properties of 6h–sic Irradiated by Coimplantation

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

Deuterium retention in silicon carbide, SiC ceramic matrix composites, and SiC coated graphite

Vacancy Effects on the Formation of He and Kr Cavities in 3C-Sic Irradiated and Annealed at Elevated Temperatures

Thermal behavior of iron in 6H-SiC: Influence of He-induced defects

Damage Effects of Au&He Dual Ion Irradiated Silicon Carbide

The Effect of Cavities on Recrystallization Growth of High-Fluence He Implanted-Sic

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Release behavior of an interstitial helium atom from 3 C -SiC(100) subsurface: A first-principles study

Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam