Abstract:Silicon carbide (SiC) is an important material used in semiconductor industries and nuclear power plants. SiC wafer implanted with H ions can be cleaved inside the damaged layer after annealing, in order to facilitate the transfer of a thin SiC slice to a handling wafer. This process is known as “ion-cut” or “Smart-Cut”. It is worth investigating the exfoliation efficiency and residual lattice defects in H-implanted SiC before and after annealing. In the present paper, lattice damage in the 6H-SiC implanted by H2+ to a fluence of 5 × 1016 H2+/cm2 at 450 and 900 °C was investigated by a combination of Raman spectroscopy and transmission electron microscopy. Different levels of damage caused by dynamic annealing were observed by Raman spectroscopy and transmission electron microscopy in the as-implanted sample. Atomic force microscopy and scanning white-light interferometry were used to observe the sample surface morphology. Surface blisters and exfoliations were observed in the sample implanted at 450 °C and then annealed at 1100 °C for 15 min, whereas surface blisters and exfoliation occurred in the sample implanted at 900 °C without further thermal treatment. This finding can be attributed to the increase in the internal pressure of platelets during high temperature implantation. The exfoliation efficiency, location, and roughness after exfoliation were investigated and possible reasons were discussed. This work provides a basis for further understanding and improving the high-efficiency “ion-cut” technology.

The Effect of Cavities on Recrystallization Growth of High-Fluence He Implanted-Sic

Recrystallization Phase in He-Implanted 6H-SiC

Recrystallization of He-Ion Implanted 6H-Sic Upon Annealing

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Optical Properties Revealing Annealing Behavior of High-Temperature He-Implantation Induced Defects in Silicon Carbide

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

Ion Beam Induced Crystallization Effect and Growth Kinetics of Buried SiC Layers Formed by Carbon Implantation into Silicon

Vacancy Effects on the Formation of He and Kr Cavities in 3C-Sic Irradiated and Annealed at Elevated Temperatures

Transmission Electron Microscopy and High-Resolution Electron Microscopy Studies of Structural Defects Induced in Si Single Crystals Implanted by Helium Ions at 600 °C

Comparison of Cavities Formed in Single Crystalline and Polycrystalline Α-Sic after H Implantation

High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-Sic

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

Structural and Optical Properties of 6h–sic Helium-Implanted at 600 K

The Structural Evolution of Light-Ion Implanted 6H-Sic Single Crystal: Comparison of the Effect of Helium and Hydrogen

Phase Transformation and Ion Beam Induced Crystallization in SiC Layers Formed by Mevva Implantation of Carbon into Silicon

Study of Surface Exfoliation on 6H-Sic Induced by H2+ Implantation

Hrtem Study of SiC Buried Layer Formed by C+implantation in Silicon

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic

Transmission Electron Microscopy Investigations of Bubble Formation in He-implanted Polycrystalline SiC

Microstructure Evolution in He-Implanted Si at 600 C Followed by 1000 C Annealing

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation