Abstract:For strained-silicon metal-oxide-semiconductor field-effect-transistors (MOSFETs), the formation of a low-resistance source and drain region is as important in terms of enhanced performance as optimizing the strain-induced increase in inversion-carrier mobility. The crystallographic, compositional, and electrical properties of an arsenic-ion implanted strained silicon/Si0.7Ge0.3 heterostructure were investigated in order to acquire basic information for fabricating low-resistance source and drain region of the n-channel strained-silicon MOSFET. The strained-silicon layer is completely recrystallized by rapid thermal annealing after arsenic implantation, but misfit dislocations were formed by annealing (at 1000 °C) in the case thickness of the strained-silicon layer exceeding the critical thickness. Arsenic diffusivity in strained silicon was identical to that in silicon, whereas that in SiGe was higher than that in silicon. Germanium recoil and enhanced diffusion caused by arsenic implantation to the SiGe layer was observed. This phenomenon can degrade the abruptness of the strained-silicon/SiGe interface during the formation of a shallow source and drain region. Solubility limit of arsenic in strained silicon was 2×1020 cm−3 and identical to that in silicon, on the other hand, the solubility limit in Si0.7Ge0.3 reduced by half. Electron mobility in strained silicon was by about 20%–30% higher than that in silicon, and that in Si0.7Ge0.3 was by about 20%–30% lower than those in silicon. In order to reduce parasitic resistance in the shallow source and drain region, thicker strained silicon layer is thus desirable, however, it should be very careful to control the strained-silicon thickness below the critical value.

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Evolution of secondary defects in arsenic implanted Si

Implantation-dominated Junction Depths of Low-Temperature and Electron-Beam-annealed As Source—drain Regions

Improved Si3N4/Si/GaAs Metal-Insulator-semiconductor Interfaces by in Situ Anneal of the As-Deposited Si

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide

Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers

Optical response of free-carrier plasma effects of MeV ion implanted silicon

Nano-Structured Silicon: Fabrication, Optical Property, Defect States and Device Application

High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivity

Investigation of the Doping Profile for Ion Implants and Rapid Annealing in Silicon Via an Improved Method

Surface Morphology Of He-Implanted Single-Crystalline Silicon

Optical-Response of Free-Carrier Plasma Effects of Mev Arsenic-Ion-Implanted Silicon

Optical Properties Revealing Annealing Behavior of High-Temperature He-Implantation Induced Defects in Silicon Carbide

Structures and Field Emission Characteristics of Ion Irradiated Silicon Nanowire Arrays.

Investigation of Interface States Between GaAs and Si3N4 after He+ Implantation

Infrared Reflection Investigation of Ion‐implanted and Post‐implantation‐annealed Epitaxially Grown 6H‐sic

Nickel Ohmic Contacts of High-Concentration P-implanted 4H-Sic

Recrystallization, redistribution, and electrical activation of strained-silicon/Si0.7Ge0.3 heterostructures with implanted arsenic

Optical Effects of Doped Top Layers in Silicon-on-insulator Structures Formed by Ion Implantation

Rapid thermal annealing of Pr3+ and Eu3+ implanted silicon