Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

K.Y. Gao,B.X. Liu

DOI: https://doi.org/10.1007/s003390050898

1999-01-01

Applied Physics A

Abstract:2 and Si lattices at 380 °C, which was defined as zero-mismatch temperature. The implantation was conducted with a metal vapor vacuum arc (MEVVA) ion implanter at an extraction voltage of 45 kV. Based on a thermal conduction estimation, a temperature rise of 380 °C required the Ni-ion current density to be 35 μA/cm 2 . For the Si(111) wafers, the high conducting NiSi 2 layers were indeed directly formed after Ni-ion implantation with this specific current density to a normal dose of 2×10 17 ions/cm 2 and the resistivity was as low as 9 μΩ cm. For the Si(111) wafers pre-covered with a 10-nm Ni overlayer, the resistivity of the NiSi 2 layers obtained under the same conditions decreased down to about 6 μΩ cm. The superior electrical property of the NiSi 2 was thought to be related to its formation temperature, i.e. at a zero-mismatch temperature of 380 °C, which resulted in minimizing the stress and stress-induced defects involved in its formation as well as cooling process.