Abstract:A thin amorphous Si (a-Si) interlayer is produced between the sputtering deposited ytterbium layer and Si(001) substrate, and the growth of the ytterbium silicide (YbSi2-x) film is investigated in this paper. Formation of YbSi2-x was verified by x-ray diffraction (XRD). The silicide film morphology was examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). SEM results reveal that without the a-Si interlayer, pinholes form during YbSi2-x formation on Si(001). Furthermore, the XRD results demonstrate that there is a strong epitaxial relationship between the formed YbSi2-x and Si(001) substrate, and it is believed to be the reason for the formation of pinholes. To suppress the formation of pinholes, a thin a-Si interlayer with different thicknesses is introduced on the Si(001) substrate prior to Yb film deposition. The a-Si interlayer is produced by either sputter deposition employing a Si target or by Si ion implantation induced amorphization. In the presence of this thin a-Si interlayer, epitaxial growth of YbSi2-x is greatly suppressed even when the a-Si interlayer is so thin that full silicidation of the deposited Yb film still requires consumption of Si atoms from the Si(001) substrate. Fabrication of a pinhole-free YbSi2-x film is also demonstrated by SEM and AFM. The growth mechanism of the pinhole-free YbS'2--, film in the presence of a thin a-Si interlayer is discussed. (c) 2007 American Institute of Physics.

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