Abstract:This work focuses on the epitaxial growth process and kinetics of silicon-based Ir/yttria-stabilized zirconia (YSZ) bilayer films prepared by PLD and magnetron sputtering, including the sequential growth of a YSZ film, an Ir seed layer, and an Ir film on a silicon substrate. The results show that for growing YSZ films by PLD at the target-to-substrate distance of 60 mm, the higher the laser energy density and the oxygen pressure, the lower the laser frequency, the higher the epitaxy quality. In addition, for the preparation of the Ir-seed layer by PLD, background gas decelerates the plasma and suppresses self-sputtering and implantation, which is beneficial to obtaining a high-quality seed layer. In particular, introducing a small amount of oxygen is able to improve the epitaxial quality of the films during the growth of Ir-seed and Ir films, and the mechanism of oxygen is proposed. For the growth of Ir films by magnetron sputtering, the growth rate and the energy of argon ions increased with the increase of RF power, while the epitaxial quality is the opposite. The kinetic theory and simulation results demonstrate that this trend is mainly caused by the increase in the number of particles reaching the substrate without significantly increasing the distribution of high-energy particles. Finally, high-quality Ir (100) films on the YSZ (100) with a fresh surface are prepared. It is shown that increasing the epitaxy quality of the YSZ (100) film and the growth temperature of the Ir film can improve the quality of Ir film. Based on our results, the growth of Ir films on YSZ films with fresh surfaces resulting from in-situ argon plasma cleaning provides a new idea for preparing Ir (100)/YSZ (100) bilayer epitaxial film.

Growth Of Pinhole-Free Ytterbium Silicide Film By Solid-State Reaction On Si(001) With A Thin Amorphous Si Interlayer

Synthesis of YSZ film by solid single source PE-MOCVD method and characterization

Yttrium Silicide Formation and Its Contact Properties on Si(100)

Formation of Ysi2-X Layers on Si by High-Current Y Ion Implantation

Electronic Structure of Yb/H–Si (111) Interface

Silicidation of Ni(Yb) Film on Si(001)

Epitaxial ternary Er0.5Y0.5Si1.7 silicide layers formed by channeled ion beam synthesis

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Epitaxial Growth of Monoclinic and Cubic ZrO2 on Si(100) Without Prior Removal of the Native SiO2

Study of Optical Performance and Structure of Yb/Al (1.5 wt.% Si) and Yb/Al (Pure) Multilayers Designed for the 73.6 nm Range

Epitaxial Growth of YBa2Cu3O7−x Thin Films on Si(100) with Zirconia Buffers of Varying Crystalline Quality and Structure

Fabrication of ion-sliced yttrium-aluminum-garnet thin films on silica by He+ implantation and Cu–Sn bonding

The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates

Epitaxial Growth of YBa2Cu3O7/CeO2/YSZ Thin Films on Silicon-on-insulator Substrates

Ab Initio Modeling of Schottky-Barrier Height Tuning by Yttrium at Nickel Silicide/Silicon Interface

Van der Waals Epitaxy of Pulsed Laser Deposited Antimony Thin Films on Lattice-matched and Amorphous Substrates

Thickness and Roughness Analysis on Ysz/Si(001) Epitaxial Films with Ultra Thin Sio2 Interface by X-Ray Reflectivity

A BILAYER BUFFER USING 214T Eu2CuO4 AND CUBIC YSZ FOR GROWING YBa2Cu3Oy THIN FILMS ON Si

The deposition of Ir/YSZ double-layer thin films on silicon by PLD and magnetron sputtering: Growth kinetics and the effects of oxygen

TEM STUDY OF THE MICROSTRUCTURE AND INTERFACES IN <font>YBa</font><sub>2</sub><font>Cu</font><sub>3</sub><font>O</font><sub>y</sub> THIN FILMS GROWN ON SILICON WITH A <font>Eu</font><sub>2</sub><font>CuO</font><sub>4</sub>/<font>Y-ZrO</font><sub>2</sub> BI-LAYER BUFFER

Study of Ni/Si(100) solid-state reaction with Y addition