Abstract:This work focuses on the epitaxial growth process and kinetics of silicon-based Ir/yttria-stabilized zirconia (YSZ) bilayer films prepared by PLD and magnetron sputtering, including the sequential growth of a YSZ film, an Ir seed layer, and an Ir film on a silicon substrate. The results show that for growing YSZ films by PLD at the target-to-substrate distance of 60 mm, the higher the laser energy density and the oxygen pressure, the lower the laser frequency, the higher the epitaxy quality. In addition, for the preparation of the Ir-seed layer by PLD, background gas decelerates the plasma and suppresses self-sputtering and implantation, which is beneficial to obtaining a high-quality seed layer. In particular, introducing a small amount of oxygen is able to improve the epitaxial quality of the films during the growth of Ir-seed and Ir films, and the mechanism of oxygen is proposed. For the growth of Ir films by magnetron sputtering, the growth rate and the energy of argon ions increased with the increase of RF power, while the epitaxial quality is the opposite. The kinetic theory and simulation results demonstrate that this trend is mainly caused by the increase in the number of particles reaching the substrate without significantly increasing the distribution of high-energy particles. Finally, high-quality Ir (100) films on the YSZ (100) with a fresh surface are prepared. It is shown that increasing the epitaxy quality of the YSZ (100) film and the growth temperature of the Ir film can improve the quality of Ir film. Based on our results, the growth of Ir films on YSZ films with fresh surfaces resulting from in-situ argon plasma cleaning provides a new idea for preparing Ir (100)/YSZ (100) bilayer epitaxial film.

Epitaxial Growth of Yittria-Stabilized Zirconia Oxide Thin Film on Natively Oxidized Silicon Wafer Without an Amorphous Layer

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

Formation and Rate Processes of Y[sub 2]o[sub 3] Stabilized ZrO[sub 2] Thin Films from Zr(DPM)[sub 4] and Y(DPM)[sub 3] by Cold-Wall Aerosol-Assisted MOCVD

Formation and Rate Processes of Y2o3 Stabilized Zro2 Thin Films from Zr(Dpm)(4) and Y(Dpm)(3) by Cold-Wall Aerosol-Assisted Mocvd

Deposition of Y2O3 stabilized ZrO2 thin films from Zr(DPM)4 and Y(DPM)3 by aerosol-assisted MOCVD

Synthesis of YSZ film by solid single source PE-MOCVD method and characterization

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

The deposition of Ir/YSZ double-layer thin films on silicon by PLD and magnetron sputtering: Growth kinetics and the effects of oxygen

Crystalline Zirconia Oxide on Silicon As Alternative Gate Dielectrics

Growth and characterization of Y2O3 thin films

Preparation of epitaxial yttria-stabilized zirconia with non-quilibrium t' phase and ferroelastic domain by pulsed laser deposition

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Thermal Stability and Interfacial Properties of Zralxsiyoz Films Prepared by Pulse-Laser Deposition

Epitaxial Growth of “Strain-Free” Indium Oxide Films on (111) Yttria-Stabilized Zirconia by Metal-Organic Chemical Vapor Deposition

Improved Thermal Stability and Oxygen‐Barrier Performance of SiO2 Thin Films by Modifying Amorphous Network Structure

Epitaxial growth of complex oxides on silicon by enhanced surface diffusion in large area pulsed laser deposition

Interfacial and microstructural properties of zirconium oxide thin films prepared directly on silicon

Study On The Growth Of Crystalline Er2o3 Films On Si Substrates By Rheed Patterns