Abstract:Results are presented for modelling of the evaporation and magnetron sputter deposition of Zn(x)O(y) onto an O-terminated ZnO (0001¯) wurtzite surface. Growth was simulated through a combination of molecular dynamics (MD) and an on-the-fly kinetic Monte Carlo (otf-KMC) method, which finds diffusion pathways and barriers without prior knowledge of transitions. We examine the effects of varying experimental parameters, such as substrate bias, distribution of the deposition species and annealing temperature. It was found when comparing evaporation and sputtering growth that the latter process results in a denser and more crystalline structure, due to the higher deposition energy of the arriving species. The evaporation growth also exhibits more stacking faults than the sputtered growth. Post-annealing at 770 K did not allow complete recrystallization, resulting in films which still had stacking faults where monolayers formed in the zinc blende phase, whereas annealing at 920 K enabled the complete recrystallization of some films to the wurtzite structure. At the latter temperature atoms could also sometimes be locked in the zinc blende phase after annealing. When full recrystallization did not take place, both wurtzite and zinc blende phases were seen in the same layer, resulting in a phase boundary. Investigation of the various distributions of deposition species showed that, during evaporation, the best quality film resulted from a stoichiometric distribution where only ZnO clusters were deposited. During sputtering, however, the best quality film resulted from a slightly O rich distribution. Two stoichiometric distributions, one involving mainly ZnO clusters and the other involving mainly single species, showed that the distribution of deposition species makes a huge impact on the grown film. The deposition of predominantly single species causes many more O atoms at the surface to be sputtered or reflected, resulting in an O deficiency of up to 18% in the deposited film and therefore resulting in more stacking faults and phase boundaries. The methods used allow analysis of key mechanisms that occur during the growth process and give hints as to the optimum conditions under which complete crystalline layers can form.

The deposition of Ir/YSZ double-layer thin films on silicon by PLD and magnetron sputtering: Growth kinetics and the effects of oxygen

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

Formation and Rate Processes of Y2o3 Stabilized Zro2 Thin Films from Zr(Dpm)(4) and Y(Dpm)(3) by Cold-Wall Aerosol-Assisted Mocvd

Formation and Rate Processes of Y[sub 2]o[sub 3] Stabilized ZrO[sub 2] Thin Films from Zr(DPM)[sub 4] and Y(DPM)[sub 3] by Cold-Wall Aerosol-Assisted MOCVD

Synthesis of YSZ film by solid single source PE-MOCVD method and characterization

Deposition of Y2O3 stabilized ZrO2 thin films from Zr(DPM)4 and Y(DPM)3 by aerosol-assisted MOCVD

Growth and characterization of yttrium oxide films by reactive magnetron sputtering

Epitaxial Growth of Yittria-Stabilized Zirconia Oxide Thin Film on Natively Oxidized Silicon Wafer Without an Amorphous Layer

Preparation of epitaxial yttria-stabilized zirconia with non-quilibrium t' phase and ferroelastic domain by pulsed laser deposition

Growth and characterization of Y2O3 thin films

Epitaxial Growth of Monoclinic and Cubic ZrO2 on Si(100) Without Prior Removal of the Native SiO2

Epitaxial growth of complex oxides on silicon by enhanced surface diffusion in large area pulsed laser deposition

Improvement of Surface Morphology of Yttrium-Stabilized Zirconia Films Deposited by Pulsed Laser Deposition on Rolling Assisted Biaxially Textured Substrate Tapes

Control of Self-assembled Particles on Thin YSZ Film Deposited by PLD

Coherent Epitaxy of HfxZr1-xO2 Thin Films by High-pressure Magnetron Sputtering

Epitaxial growth of ZnO thin films on Si substrates by PLD technique

Modelling the growth of ZnO thin films by PVD methods and the effects of post-annealing

Yttrium Oxide Thin Films Prepared under Different Oxygen-Content Atmospheres: Microstructure and Optical Properties

Growth of High Quality Sr2IrO4 Epitaxial Thin Films on Conductive Substrates

Preparation of (001)-oriented PZT thick films on silicon wafer by pulsed laser deposition

Epitaxial Growth of “Strain-Free” Indium Oxide Films on (111) Yttria-Stabilized Zirconia by Metal-Organic Chemical Vapor Deposition