Deposition of Y2O3 stabilized ZrO2 thin films from Zr(DPM)4 and Y(DPM)3 by aerosol-assisted MOCVD

Haizheng Song,Changrong Xia,Yinzhu Jiang,Guangyao Meng,Dingkun Peng
DOI: https://doi.org/10.1016/S0167-577X(03)00187-3
IF: 3
2003-01-01
Materials Letters
Abstract:A novel aerosol-assisted metalorganic chemical vapor deposition (AA-MOCVD) technology was developed to prepare of Y2O3-stabilized ZrO2 (YSZ) thin films on polycrystalline substrates at the temperatures of 350–700 °C from metal β-diketonate chelates precursors. Thin films with rather uniform and amorphous microstructure were obtained at the substrate temperatures below 600 °C and changed into full cubic microstructure after annealing treatment at 1100 °C for 3 h. A detailed deposition mechanism has described the AA-MOCVD process. The resistance measurement of electrochemical cell Pt/Ni-YDC/YSZ film/Pt showed that conductivity activation energy (Ea) changed at 610 °C with 85.8 kJ/mol at 610–850 °C and 136 kJ/mol at 350–610 °C.
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