Interfacial and microstructural properties of zirconium oxide thin films prepared directly on silicon

n l zhang,z t song,q wan,q w shen,c l lin
DOI: https://doi.org/10.1016/S0169-4332(02)00965-0
IF: 6.7
2002-01-01
Applied Surface Science
Abstract:Zirconium oxide thin films were deposited directly on Si by ultra high vacuum electron beam evaporation (UHV-EBE) and rapid thermal annealed (RTA) in O2 ambient at different temperatures ranging from 300 to 800°C. X-ray photoelectron spectroscopy (XPS) revealed zirconium is in the fully oxidized state of Zr4+. X-ray diffraction (XRD) results showed that as-deposited thin films were amorphous. When the annealing temperature increased higher than 700°C, the films began to crystallize. The surface topology was studied with atomic force microscopy (AFM) and the surface of the 700°C-annealed sample was more rougher than that of the 600°C-annealed sample, due to its potentially faceted interfaces. And the typical RMS roughness ranged from 0.546 to 0.666nm across an area of 50μm×50μm. Sharp interfaces between ZrO2 and Si were obtained both by spreading resistance profile (SRP) and cross-sectional transmission electron microscope (XTEM). The interfacial oxide (∼1nm) was not detected until annealing temperature amounting to 700°C and the exact compositions were not known yet.
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