Abstract:UV exposure of zirconium sol–gel layers on Si with 5, 15, 25 at.% Zr at 400 °C in O2 for 20 min has led to the formation of high quality Zr silicate layers exhibiting low-leakage current densities of 3×10−5 A/cm2 at 1 MV/cm for the 5% Zr layers, and even lower values of 9×10−7 and 2×10−7 A/cm2 for the 15 and 25% Zr silicate layers, respectively. Annealing of these UV irradiated samples for 30 s at 1050 °C in a N2 gas flow did not cause significant changes in leakage current density at biases up to 0.7 MV/cm. The formation of SiOZr bonds led to a shift of the SiO stretching vibration towards lower wavenumbers from 1050 to 1016/cm. X-ray diffraction analyses showed that these Zr silicate layers assumed an amorphous structure after UV exposure at 400 °C, and remained amorphous and stable following the high-temperature annealing at 1050 °C without separating into phases of crystalline ZrO2 and SiO2.

Excimer UV-assisted preparation of zirconium silicate layers