Abstract:Zirconium oxide layers exhibiting excellent electrical properties have been prepared by photo-assisted sol-gel processing. We have demonstrated that UV irradiation for only 5 min led to an improved leakage current density of 8.3 x 10(-8) A/cm(2) at 1 MV/cm in accumulation. a hysterests of only similar to 10 mV, as determined from the positive and negative C-V sweeps, and an effective density of trapped electrons of 2.0 x 10(10) cm(-2) for the similar to 110 Angstrom thick layers formed. The resultant ZrO(2) films remained amorphous after UV-assisted processing at 400 degreesC, and exhibited a ratio of O/Zr of 1.7.

Photoformation of Zirconium Oxide at Low Temperatures