Abstract:Oxide films of the quality required for the fabrication of electronic and photonic devices are typically deposited at elevated temperatures and thermal equilibrium, thereby adversely impacting thermal budgets. We report the deposition and patterning of silicon dioxide (SiO2) films of high electrical and optical quality on Si(100) or polymer substrates in a N2 atmosphere and at 300 K by the photochemical conversion of thin liquid tetraethoxysilane (TEOS) layers with narrowband vacuum ultraviolet radiation [vacuum ultraviolet (VUV), 172 nm] provided by efficient microplasma lamps. Irradiating liquid TEOS layers, produced by spin-coating the precursor onto a substrate, with a VUV intensity of 13 mW cm−2, yields 40 nm-thick SiO2 films having a dielectric breakdown strength (Eb) of 5 MV cm−1, for which no precedent exists in the deposition of oxide films at 300 K. If room temperature-deposited films are post-annealed at 200 °C, Eb rises to 7.5 MV cm−1, which is <12% below the measured value (8.5 MV cm−1) for 40 nm SiO2 films grown by thermal oxidation. The deposition of 1 μm thick, stoichiometric SiO2 films requires only 20 min of VUV illumination at low optical fluences, and films with thicknesses of ∼35–60 nm exhibit a refractive index of 1.45 (633 nm). X-ray photoelectron spectrometry and Rutherford backscattering analysis indicate that, despite the deposition temperature, hydrocarbon impurity levels are near or below the detection limit. The capability for depositing 960 nm-thick SiO2 films uniformly (to within 0.6%) by liquid → solid photochemical conversion over a 5 cm diameter Si substrate and patterning films onto flexible polymer substrates has also been demonstrated.

Formation of High-Quality Advanced High-K Oxide Layers at Low Temperature by Excimer Uv Lamp-Assisted Photo-Cvd and Sol-Gel Processing

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Photoformation of Zirconium Oxide at Low Temperatures

X-ray Diffraction and Electrical Characterization of Photo-Cvd Zirconium Oxide Layers

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Hafnium Oxide Layers Derived by Photo-Assisted Sol–gel Processing

Excimer UV-assisted preparation of zirconium silicate layers

Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Efficient gradient heating-up approach for rapid growth of high-quality amorphous ZrO2 dielectric films

Rapid and Reliable Formation of Highly Densified Bilayer Oxide Dielectrics on Silicon Substrates via DUV Photoactivation for Low-Voltage Solution-Processed Oxide Thin-Film Transistors

Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature

Room‐Temperature Fabrication of High‐Quality Lanthanum Oxide High‐κ Dielectric Films by a Solution Process for Low‐Power Soft Electronics

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Synthesis and Characterization of HfO2 and ZrO2 Thin Films Deposited by Plasma Assisted Reactive Pulsed Laser Deposition at Low Temperature

Uniform broad-area deposition and patterning of SiO2 nanofilms by 172 nm photochemical conversion of liquid tetraethoxysilane layers at 300 K

Low-temperature sol–gel methods for the integration of crystalline metal oxide thin films in flexible electronics

Structural Optimization of Oxide/Metal/Oxide Transparent Conductors for High‐Performance Low‐Emissivity Heaters

ZrO2 Films Deposited by Photo-Cvd at Low Temperatures