Abstract:In the realm of electronic applications, there is a pronounced interest in developing high-performance metal oxides via solution processes. Traditional sol-gel techniques, however, are constrained by their reliance on high thermal processing conditions. This study presents a novel approach for fabricating ZrAlOx hybrid dielectric thin films at low temperature utilizing a solution self-combustion process, which involves the coordination of Zr and Al salts with oxidizer and fuel ligands. Thermal analysis of the ZrAlOx precursors indicated that self-combustion occurs at approximately 180 °C, supplying the necessary internal energy to facilitate the formation of metal oxides. This internal energy enables both the conversion of precursors and the elimination of organic impurities with reduced external energy demand, significantly lowering the required annealing temperature. Additionally, the impact of composition ratio of oxidizer (zirconium nitrate) to fuel (aluminum acetylacetonate) was investigated. Results demonstrated that an equivalent ratio of oxidizer to fuel produced the most vigorous self-combustion reaction, thus generating the maximal internal energy needed to compensate for the formation energies of the M-O-M structure. At a low annealing temperature of 180 °C, the resultant amorphous ZrAlOx thin films, synthesized under the stoichiometric condition, displayed the dense, smooth, and pore-free morphology with an ultra-thin thickness of only 11.6nm. MIM device incorporating this as the dielectric layer exhibited electrical properties comparable to that achieved with expensive vacuum deposition techniques, including low leakage current density of 2.81×10-8A/cm2 at 1MV/cm, high capacitance density of 1133 nF/cm2 at 1kHz, and substantial relative dielectric constant of 14.71. Finally, the high-performance TFT utilizing ZrAlOx dielectric was achieved, demonstrating high mobility of 33.05cm²/Vs, Ion/Ioff of 5.10×105, and low-voltage operational characteristics with Vth of only 0.21V. Therefore, the solution self-combustion synthesis method delineated in this study offers promising potential for utilization in the burgeoning fields of flexible and stretchable electronics.

Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Room Temperature Fabrication of High Quality ZrO2Dielectric Films for High Performance Flexible Organic Transistor Applications

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Ultralow-Voltage Transparent Electric-Double-Layer Thin-Film Transistors Processed at Room-Temperature

Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors

UV-directly Patternable Organic–inorganic Hybrid Composite Dielectrics for Organic Thin-Film Transistors

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors.

Low-voltage Transparent Electric-Double-layer ZnO-based Thin-Film Transistors for Portable Transparent Electronics

Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors

P‐7.10: Facile low‐temperature solution‐processed ZrO<sub>2</sub> films as high‐k dielectrics for flexible low ‐ power thin‐film transistors

Low-Voltage High-Stability InZnO Thin-Film Transistor Using Ultra-Thin Solution-Processed ZrO Dielectric

Solution Processable High Quality ZrO2 Dielectric Films for Low Operation Voltage and Flexible Organic Thin Film Transistor Applications

Low-temperature Processing of High-Performance Transparent Ultra-Thin ZrAlOx Hybrid Dielectric Films Via Solution Self-Combustion Synthesis and Application in TFTs

Rapid and Reliable Formation of Highly Densified Bilayer Oxide Dielectrics on Silicon Substrates via DUV Photoactivation for Low-Voltage Solution-Processed Oxide Thin-Film Transistors

Room‐Temperature Fabrication of High‐Quality Lanthanum Oxide High‐κ Dielectric Films by a Solution Process for Low‐Power Soft Electronics

Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.

Low-voltage, Solution-Processed InZnO Thin-Film Transistors with Enhanced Performance Achieved by Bilayer Gate Dielectrics