Abstract:A high-quality dielectric layer is essential for organic thin-film transistors (OTFTs) operated at a low-power consumption level. In this study, a facile improved technique for the synthesis of solution-processed silica is proposed. By optimizing the synthesis and processing technique fewer pores were found on the surface of the film, particularly no large holes were observable after improving the annealing process, and the improved solution-gelation (sol-gel) SiOx dielectric achieved a higher breakdown strength (1.6 MV/cm) and lower leakage current density (10-8 A/cm2 at 1.5 MV/cm). Consequently, a pentacene based OTFT with a high field effect mobility (~1.8 cm2/Vs), a low threshold voltage (-1.7 V), a steeper subthreshold slope (~0.4 V/dec) and a relatively high on/off ratio (~105) was fabricated by applying a hybrid gate insulator which consisted of improved sol-gel SiOx and polyvinyl phenol (PVP). This could be ascribed to both the high k of SiOx and the smoother, hydrophobic dielectric surface with low trap density, which was proved by atomic force microscopy (AFM) and a water contact angle test, respectively. Additionally, we systematically studied and evaluated the stability of devices in the compressed state. The devices based on dielectric fabricated by conventional sol-gel processes were more susceptible to the curvature. While the improved device presented an excellent mechanic strength, it could still function at the higher bending compression without a significant degradation in performance. Thus, this solution-process technology provides an effective approach to fabricate high-quality dielectric and offers great potential for low-cost, fast and portable organic electronic applications.

Flexible Low-Voltage Organic Thin-Film Transistors Enabled by Low-Temperature, Ambient Solution-Processable Inorganic/Organic Hybrid Gate Dielectrics

UV-directly Patternable Organic–inorganic Hybrid Composite Dielectrics for Organic Thin-Film Transistors

Low-voltage-operation of Flexible Organic C8-BTBT Thin-Film Transistors with a Reactively Sputtered AlOx Gate Dielectric

Low-Voltage Organic Thin-Film Transistors with Solution-Processed Hafnium Oxide and Polymer Dielectrics

Low-voltage p -channel, n -channel and ambipolar organic thin-film transistors based on an ultrathin inorganic/polymer hybrid gate dielectric layer

Solution Processed Organic Thin-Film Transistors with Hybrid Low/High Voltage Operation

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Low-voltage operated organic thin film transistors and integrated devices with photo-cured and patterned siloxane based organic–inorganic hybrid high-k dielectrics

Polysiloxane-Poly(Vinyl Alcohol) Composite Dielectrics For High-Efficiency Low Voltage Organic Thin Film Transistors

Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices

Towards Low-Voltage Organic Thin Film Transistors (otfts) with Solution-Processed High-K Dielectric and Interface Engineering

High-Performance Solution-Processed Low-Voltage Polymer Thin-Film Transistors with Low- $k$ /High- $k$ Bilayer Gate Dielectric

Solution-processed Organic Field-Effect Transistors with Cross-Linked Poly(4-Vinylphenol)/polyvinyl Alcohol Bilayer Dielectrics

Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors.

Low-Voltage Organic Thin-Film Transistors Based on Solution-Processed Hybrid Dielectrics: Theoretical and Experimental Studies

Low-voltage Flexible Pentacene Thin Film Transistors with a Solution-Processed Dielectric and Modified Copper Source–drain Electrodes

Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric

Polymer/Silicon Nanoparticle Hybrid Layer As High-K Dielectrics In Organic Thin-Film Transistors

Organic Field-Effect Transistors Based on Low-Temperature Processable Transparent Polymer Dielectrics with Low Leakage Current

Solution-Processable Barium Titanate and Strontium Titanate Nanoparticle Dielectrics for Low-Voltage Organic Thin-Film Transistors