Abstract:Zirconium silicate films with high thermal stability and good electrical properties have been prepared on n-Si(100) substrates and commercially available Pt-coated Si substrates to fabricate metal–insulator–metal (MIM) structures by the pulsed laser deposition (PLD) technique using a Zr0.69Si0.31O2-δ ceramic target. Rapid thermal annealing (RTA) in N2 was performed. X-ray diffraction indicated that the films annealed at 800 °C remained amorphous. Differential thermal analysis revealed that amorphous Zr silicate crystallized at 830 °C. X-ray photoelectron spectroscopy showed that RTA annealing of Zr silicate films at 900 °C led to phase separation. The dielectric constant has been determined to be about 18.6 at 1 MHz by measuring the Pt/Zr silicate/Pt MIM structure. The equivalent oxide thicknesses (EOTs) and the leakage-current densities of films with 6-nm physical thickness deposited in O2 and N2 ambient were investigated. An EOT of 1.65 nm and a leakage current of 31.4 mA/cm2 at 1-V gate voltage for the films prepared in N2 and RTA annealed in N2 at 800 °C were obtained. An amorphous Zr-rich Zr silicate film fabricated by PLD looks to be a promising candidate for future high-k gate-dielectric applications.

Formation of Zr-disilicide by high-current Zr ion implantation into Si using metal vapor vacuum arc ion source

Formation of Ti Silicides by Metal-Vapor Vacuum Arc Ion Source Implantation

High Current Metal-Ion Implantation to Fabricate Metal Silicides

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Formation of Ysi2-X Layers on Si by High-Current Y Ion Implantation

High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivity

Direct Synthesis of Continuous Sm Disilicide Films by Sm-ion Implantation Using a Metal Vapour Vacuum Arc Ion Source

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Synthesis of Continuous SmSi2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

Ti–Si Compounds Formation by High-Current Ion Implantation

Rare Earth Metal Silicides Synthesized by High Current Metal Ion Implantation

Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

Formation of DO23-Al3Zr by Zr Ion Implantation Using a Metal Vapour Vacuum Arc Ion Source

Cosi2 Formation by High Current Ion Implantation with A Metal Vapor Vacuum Arc Ion Source

Synthesis of Β- and Α-Fesi2 Phases by Fe Ion Implantation into Si Using Metal Vapor Vacuum Arc Ion Source

Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source

Thermal Stability and Electrical Properties of Zr Silicate Films for High- K Gate-Dielectric Applications, As Prepared by Pulsed Laser Deposition

A Preliminary-Study of the Formation of Wsi2 by High-Current W-Ion Implantation

Formation of N-Type Crsi2 Semiconductor Layers on Si by High-Current Cr Ion Implantation

Formation of Lasi2-X Layers on Si by High-Current La Ion Implantation

CrSi2 films synthesized by high current Cr ion implantation and their physical properties