Abstract:High-current Fe ion implantation technique was employed to synthesize Fe-silicide layers on Si wafers, using a newly constructed metal vapor vacuum arc ion source. The Fe ions were extracted at a voltage of 40 kV with a varying ion current density from 65 to 152 μA/cm2 and a nominal ion dose varied from 3×1017 to 3×1018 Fe/cm2. At a fixed nominal dose of 4×1017 Fe/cm2, a semiconducting β-FeSi2 layer gradually grew on Si with increasing ion current density and a qualified β-FeSi2 layer with a relative sharp interface was obtained, when the ion current densities exceeded 115 μA/cm2. While implanting at a fixed ion current density of 152 μA/cm2 with varying ion dose, the β-FeSi2 phase began to form first at a nominal dose of 3×1017 Fe/cm2, and eventually transformed into a metallic α-FeSi2 phase when the nominal dose reached 3×1018 Fe/cm2. Further information of the formation of Fe disilicides was obtained by comparing the postannealing results of some of the implanted wafers with those observed immediately after implantation. The formation mechanism of the Fe disilicides is discussed in terms of the beam heating effect, which in turn resulted in a simultaneous thermal annealing during Fe ion implantation.

A Preliminary-Study of the Formation of Wsi2 by High-Current W-Ion Implantation

Ti–Si Compounds Formation by High-Current Ion Implantation

Cosi2 Formation by High Current Ion Implantation with A Metal Vapor Vacuum Arc Ion Source

Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source

Formation of Ti Silicides by Metal-Vapor Vacuum Arc Ion Source Implantation

C54-Tisi2 Formed by Direct High-Current Ti-Ion Implantation

Formation of Zr-disilicide by high-current Zr ion implantation into Si using metal vapor vacuum arc ion source

Formation of Ysi2-X Layers on Si by High-Current Y Ion Implantation

Formation of Ndsi2 Phase by High-Current Nd-Ion Implantation

High Current Metal-Ion Implantation to Fabricate Metal Silicides

Formation of N-Type Crsi2 Semiconductor Layers on Si by High-Current Cr Ion Implantation

Ion-Beam-Modified Interfacial Growth of Tungsten Disilicide

Study about Iron Disilicide Formation by High Current Ion Implantation

Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

Growth of WSi 2 in Phosphorous-Implanted W/«Si» Couples

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Formation of Ti-Si compound by metal vapor vacuum arc ion source

Formation of MoSi2 and associated fractal growth on Si surface upon high current pulsed Mo-ion implantation

FORMATION AND CHARACTERIZATION OF 3C-SIC BY CARBON-ION IMPLANTATION INTO SILICON WITH A MEVVA ION SOURCE

Synthesis of Β- and Α-Fesi2 Phases by Fe Ion Implantation into Si Using Metal Vapor Vacuum Arc Ion Source

Formation of the Ersi2 Phase and the Associated Fractal Pattern on the Si Surface Upon High Current Er-Ion Implantation