Formation of Ti-Si compound by metal vapor vacuum arc ion source

Dehua Zhu,Hongbo Lu,Baixin Liu
1995-01-01
Abstract:TiSi 2 was formed by Ti ion implantation into Si(100) and Si(111). Ti ions were extracted from a metal vapor vacuum arc ion source at 40 kV with high current density. When the ion current density was up to 100��A/cm 2 to dose of 5��10 17cm 2, XRD, RBS and four point probe measurements revealed that C54-TiSi 2 with a low sheet resistivity (below 3.0��/��) was formed.
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