Abstract:Silicon carbide (SiC) films were synthesized by combined metal vapor vacuum arc (MEVVA) ion implantation with ion beam assisted deposition (IBAD) techniques. Carbon ions with 40keV energy were implanted into Si(100) substrates at ion fluence of 5×1016ions/cm2. Then silicon and carbon atoms were co-sputtered on the Si(100) substrate surface, at the same time the samples underwent assistant Ar-ion irradiation at 20keV energy. A group of samples with substrate temperatures ranging from 400 to 600°C were used to analyze the effect of temperature on formation of the SiC film. Influence of the assistant Ar-ion irradiation was also investigated. The structure, morphology and mechanical properties of the deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and nanoindentation, respectively. The bond configurations were obtained from IR absorption and Raman spectroscopy. The experimental results indicate that microcrystalline SiC films were synthesized at 600°C. The substrate temperature and assistant Ar-ion irradiation played a key role in the process. The assistant Ar-ion irradiation also helps increasing the nanohardness and bulk modulus of the SiC films. The best values of nanohardness and bulk modulus were 24.1 and 282.6GPa, respectively.

Low Temperature Synthesis of Β-Sic by a Metal Vapor Vacuum Arc Ion Source

Low-temperature Epitaxial Growth of Β-Sic by Multiple-Energy Ion Implantation

Cosi2 Formation by High Current Ion Implantation with A Metal Vapor Vacuum Arc Ion Source

Zero-Mismatch Temperature Synthesis of Nisi2 by A Metal Vapor Vacuum Arc Ion Source

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Formation of Ti Silicides by Metal-Vapor Vacuum Arc Ion Source Implantation

Low-temperature Β-Sic Interlayer for Diamond Film on Cemented Carbide

X-ray and Fourier transformed infrared investigation of beta-SiC growth by ion implantation

Synthesis of Ultra-Thin Carbon Layers on Sic Substrate by Ion Implantation

Effect of Substrate Temperature on CoSi2 Formation by a Metal Vapor Vacuum Arc Ion Source

X-Ray Characterization Of Beta-Sic Growth And Structural Modification Of Si By Mev Ion Implantation

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Synthesis of Continuous SmSi2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

Formation of Ti-Si compound by metal vapor vacuum arc ion source

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Growth Of Sic Nanorods At Low Temperature

Ti–Si Compounds Formation by High-Current Ion Implantation

Iodine Assisted Low Temperature Synthesis of 3C-Sic Nanostructures and Their Formation Process.

Low temperature synthesis and formation mechanism of dense SiC coating layer by fluidized bed chemical vapor deposition

Ion Beam Synthesis of embedded SiC

Low temperature ion beam synthesis of NiSi2 layers with fine electrical property