Abstract:In this study, the influence of annealing at 250 °C for 500 h on Ohmic contact of backside electrode of Silicon Carbide Schottky-Barrier-Diode (SiC-SBD) was investigated. Considering the prevalence status of the SiC-SBD as power device applications, the experiment was implemented on a commercial based SiC-SBD device. The annealing has brought remarkable transition in the structure and the impurity profile at the surface and the Ag/Ni interface of the device as a result of oxidation. For these evaluations, dual-beam Time-of-flight Secondary Ion Mass Spectrometry is regarded as an available analytical technique on the high sensitivity and imaging ability. In the deeper region of the backside electrode, an amorphous Ni–Ti alloy layer was found between the Ni/Ti interface of the annealed sample, which is also considered the result of diffusion due to the annealing. On the other hands, some nuggets of glassy-carbon and Ti cubic structures were observed in the Ni(Si)–C layer of both the non-annealed and the annealed samples. These structures are deduced to be formed during the fabrication process of the backside electrode and to be stable against the annealing. For these evaluations, Transmission Electron Microscopy (TEM) and Scanning TEM (STEM)—Energy Dispersion X-ray analysis were optimized with the high lateral resolution.

X-Ray Characterization Of Beta-Sic Growth And Structural Modification Of Si By Mev Ion Implantation

X-ray and Fourier transformed infrared investigation of beta-SiC growth by ion implantation

Low-temperature Epitaxial Growth of Β-Sic by Multiple-Energy Ion Implantation

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Formation of SiC-surface layer by ion implantation

Thermal Stability and Interface Improvement of Thin Nisige by C+ Ion Implantation

Infrared Reflection Investigation of Ion‐implanted and Post‐implantation‐annealed Epitaxially Grown 6H‐sic

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Synthesis of silicon carbide films by combined implantation with sputtering techniques

The Growth of Si on Sic Complex Substrate by Cvd

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

The Effect of Cavities on Recrystallization Growth of High-Fluence He Implanted-Sic

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon

Low Temperature Synthesis of Β-Sic by a Metal Vapor Vacuum Arc Ion Source

Ion Beam Synthesis of embedded SiC

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic

3D imaging of backside metallization of SiC-SBD influenced by annealing

Silicon Carbide Formation by Methane Plasma Immersion Ion Implantation into Silicon

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon