Abstract:The YSi2, LaSi2, CeSi2, PrSi2, NdSi2, SmSi2, GdSi2, TbSi2, DySi2, and ErSi2, layers were formed on Si wafers by respective high current metal-ion implantation using a metal vacuum vapor arc (MEVVA) ion source and the formation temperature was considerable lower than the critical temperatures (300-350 degreesC) required for the rare earth metal silicides by solid-state reaction. It was found that the crystalline structures could be improved with increasing slightly the formation temperature as well as the implantation dose. Concerning the growth kinetics, in some cases, fractal patterns were observed on Si surfaces and the branches of the fractals consisted of the grains of respective precipitated silicides. Interestingly, the fractal dimension increased with formation temperature and eventually approached to a value of 2.0, corresponding to a continuous layer, which was required in practical application. The formation mechanism as well as the growth kinetics was discussed in terms of the far-from-equilibrium process involved in the MEVVA ion implantation.

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Formation of MoSi2 and associated fractal growth on Si surface upon high current pulsed Mo-ion implantation

Formation of the Ersi2 Phase and the Associated Fractal Pattern on the Si Surface Upon High Current Er-Ion Implantation

Formation of TaSi2 and associated fractal growth on Si surface upon high current pulsed Ta-ion implantation

Formation of Ti Silicides by Metal-Vapor Vacuum Arc Ion Source Implantation

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Ti–Si Compounds Formation by High-Current Ion Implantation

Synthesis of Continuous SmSi2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

Structural and Morphological Evolution Emerging in Si Surface Layers Upon High-Current Tb-Ion Implantation

FORMATION AND CHARACTERIZATION OF 3C-SIC BY CARBON-ION IMPLANTATION INTO SILICON WITH A MEVVA ION SOURCE

Direct Synthesis of Continuous Sm Disilicide Films by Sm-ion Implantation Using a Metal Vapour Vacuum Arc Ion Source

Formation of Ndsi2 Phase by High-Current Nd-Ion Implantation

Rare Earth Metal Silicides Synthesized by High Current Metal Ion Implantation

Formation of SiC-surface layer by ion implantation

Formation of Zr-disilicide by high-current Zr ion implantation into Si using metal vapor vacuum arc ion source

Formation of Ysi2-X Layers on Si by High-Current Y Ion Implantation

Growth of DySi2Layers on Si Surface by High-Current Dy-Ion Implantation

Formation of Lasi2-X Layers on Si by High-Current La Ion Implantation

Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing

Fabrication of Prsi2 Layers and Associated Morphology on Si Surface by A Single-Step High Current Pr-Ion Implantation

High Current Metal-Ion Implantation to Fabricate Metal Silicides