Abstract:Metal Vapor Vacuum Are (MEVVA) ion implantation was employed to synthesize NiSi2 layers on Si(100) wafers and was conducted at a voltage of 45 kV with various current densities to a fixed dose of 2 x 10(17) ions/cm(2), required by the chemical stoichiometry. From a thermal expansion calculation, there would be no size mismatch between NiSi2 and Si lattices at 380 degrees C. A current density of 35 mu A/cm(2) was required, according to an estimation, to heat the wafers to 380 degrees C. Implanting with this selected current density, a unique NiSi2 layer was indeed obtained with a resistivity as low as 14+/-2 mu Omega cm. Furthermore, a temperature dependence of the resistivity was observed and the NiSi2 layers formed at temperatures deviated from the zero-mismatch temperature featured greater resistivities than that of the layer synthesized at 380 degrees C. The experimental results are reported in detail together with a discussion of the observed temperature dependence. (C) 1999 Elsevier Science B.V. All rights reserved.

Formation of Ndsi2 Phase by High-Current Nd-Ion Implantation

Formation of N-Type Crsi2 Semiconductor Layers on Si by High-Current Cr Ion Implantation

Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Growth of DySi2Layers on Si Surface by High-Current Dy-Ion Implantation

Structural and Morphological Evolution Emerging in Si Surface Layers Upon High-Current Tb-Ion Implantation

Formation of Lasi2-X Layers on Si by High-Current La Ion Implantation

Formation of the Ersi2 Phase and the Associated Fractal Pattern on the Si Surface Upon High Current Er-Ion Implantation

Formation of Ysi2-X Layers on Si by High-Current Y Ion Implantation

High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivity

Synthesis of Continuous SmSi2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

Fabrication of Prsi2 Layers and Associated Morphology on Si Surface by A Single-Step High Current Pr-Ion Implantation

Formation of MoSi2 and associated fractal growth on Si surface upon high current pulsed Mo-ion implantation

Pattern Evolution of NiSi2 on Si Surface Upon High Current Pulsed Ni Ion Implantation

Ti–Si Compounds Formation by High-Current Ion Implantation

Low temperature ion beam synthesis of NiSi2 layers with fine electrical property

Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

A Preliminary-Study of the Formation of Wsi2 by High-Current W-Ion Implantation

Thermal Stability and Interface Improvement of Thin Nisige by C+ Ion Implantation

Formation of Zr-disilicide by high-current Zr ion implantation into Si using metal vapor vacuum arc ion source