Formation of MoSi2 and associated fractal growth on Si surface upon high current pulsed Mo-ion implantation

X.Q. Cheng,R.S. Wang,X.J. Tang,B.X. Liu
DOI: https://doi.org/10.1016/S0168-583X(03)00962-5
2003-01-01
Abstract:Using a metal vapor vacuum arc ion source, continuous and stable MoSi2 films were directly obtained by high current Mo-ion implantation into Si wafers with neither external heating nor post-annealing. Interestingly, under some specific conditions, the formed MoSi2 grains organized themselves in fractal patterns featuring unique self-similarity. The mechanism responsible for the MoSi2 formation as well as the growth of the fractal pattern is discussed in terms of the dynamic launching of the energetic Mo ions into Si, ion beam heating effect, and the effect of ion dose during high current Mo-ion implantation of far from equilibrium.
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