Abstract:High-current Fe ion implantation technique was employed to synthesize Fe-silicide layers on Si wafers, using a newly constructed metal vapor vacuum arc ion source. The Fe ions were extracted at a voltage of 40 kV with a varying ion current density from 65 to 152 muA/cm2 and a nominal ion dose varied from 3 X 10(17) to 3 X 10(18) Fe/cm2. At a fixed nominal dose of 4 X 10(17) Pe/cm2, a semiconducting beta-FeSi2 layer gradually grew on Si with increasing ion current density and a qualified beta-FeSi2 layer with a relative sharp interface was obtained, when the ion current densities exceeded 115 muA/cm2. While implanting at a fixed ion current density of 152 muA/cm2 with varying ion dose, the beta-FeSi2 phase began to form first at a nominal dose of 3 X 10(17) Fe/cm2, and eventually transformed into a metallic alpha-FeSi2 phase when the nominal dose reached 3 X 10(18) Fe/cm2. Further information of the formation of Fe disilicides was obtained by comparing the postannealing results of some of the implanted wafers with those observed immediately after implantation. Tle formation mechanism of the Fe disilicides is discussed in terms of the beam heating effect, which in turn resulted in a simultaneous thermal annealing during Fe ion implantation.

Synthesis of Continuous SmSi2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

Direct Synthesis of Continuous Sm Disilicide Films by Sm-ion Implantation Using a Metal Vapour Vacuum Arc Ion Source

Formation of Ysi2-X Layers on Si by High-Current Y Ion Implantation

Growth of DySi2Layers on Si Surface by High-Current Dy-Ion Implantation

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Synthesis of Molybdenum Silicide by Both Ion Implantation and Ion Beam Assisted Deposition

Formation of Ti Silicides by Metal-Vapor Vacuum Arc Ion Source Implantation

Formation of Zr-disilicide by high-current Zr ion implantation into Si using metal vapor vacuum arc ion source

Synthesis of Β- and Α-Fesi2 Phases by Fe Ion Implantation into Si Using Metal Vapor Vacuum Arc Ion Source

CrSi2 films synthesized by high current Cr ion implantation and their physical properties

Formation of Ndsi2 Phase by High-Current Nd-Ion Implantation

High Current Metal-Ion Implantation to Fabricate Metal Silicides

Synthesis Of Beta-Fesi2 And Alpha-Fesi2 Phases By Fe Ion-Implantation Into Si Using Metal Vapor Vacuum-Arc Ion-Source

Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source

Formation of MoSi2 and associated fractal growth on Si surface upon high current pulsed Mo-ion implantation

Formation of Lasi2-X Layers on Si by High-Current La Ion Implantation

Rare Earth Metal Silicides Synthesized by High Current Metal Ion Implantation

Fabrication of Prsi2 Layers and Associated Morphology on Si Surface by A Single-Step High Current Pr-Ion Implantation

Continuous Cosi2 Layers in Silicon Synthesized by Co-Ion Implantation

Structural and Morphological Evolution Emerging in Si Surface Layers Upon High-Current Tb-Ion Implantation

Low temperature ion beam synthesis of NiSi2 layers with fine electrical property