Abstract:Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of first-principle calculations, X-ray diffraction (XRD), and Raman spectroscopy demonstrate the amorphization of silicon substrate without any tendency to the segregation of carbon in the samples synthesized at low fluencies. The formation of a SiO2-like structure at this stage was also detected. X-ray photoelectron spectroscopy (XPS), XRD, and Raman spectroscopy demonstrate that an increase in carbon content at 10^17 cm-2 fluence leads to the growth of 6H-SiC films on the surface of the amorphous silicon substrate. Atomic force microscopy (AFM) data obtained also demonstrates the decreasing of surface roughens after the formation of SiC film. XPS and Raman spectra suggest that excessive carbon content leaves the SiC matrix via the formation of an insignificant amount of partially oxidized carbon nanostructures. Optical measurements also support the claim of high-quality 6H-SiC film formation in the samples synthesized at 10^17 cm-2 fluence and demonstrate the absence of any detectable contribution of nanostructures formed from excessive carbon on the optical properties of the material under study.

Continuous Cosi2 Layers in Silicon Synthesized by Co-Ion Implantation

Epitaxial Cosi2 Layers Fabricated by A Single-Step Technique of High-Current Co-Ion Implantation

Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source

Cosi2 Formation by High Current Ion Implantation with A Metal Vapor Vacuum Arc Ion Source

High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivity

CrSi2 films synthesized by high current Cr ion implantation and their physical properties

Formation of Lasi2-X Layers on Si by High-Current La Ion Implantation

Formation of N-Type Crsi2 Semiconductor Layers on Si by High-Current Cr Ion Implantation

Synthesis of Continuous SmSi2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

CoSi_2/Si Schottky Junction Formed by High Flux Co Ion Implantation

Synthesis of Ultra-Thin Carbon Layers on Sic Substrate by Ion Implantation

The Effect Of Amorphous Si On The Epitaxial Growth Of Cosi2 By Co/Si/Ti/Si Solid State Epitaxy

Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon

Formation of Ndsi2 Phase by High-Current Nd-Ion Implantation

Growth of DySi2Layers on Si Surface by High-Current Dy-Ion Implantation

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Optimizing the Growth of Cosi2 Film with Oxide-Mediated Cosi2 Template by Silicon Cap Layer

Buried Cobalt Silicide Layer Under Thin Silicon Film Fabricated By Wafer Bonding And Hydrogen-Induced Delamination Techniques

Fabrication of Silicon-Silicide-On-Insulator Substrates Using Wafer Bonding and Layer-Cutting Techniques

Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

Formations and Morphological Stabilities of Ultrathin Cosi2 Films