Abstract:Epitaxial films of cuprous oxide, Cu2O, are electrodeposited from aqueous solution onto single-crystalline Si(001). The epitaxial growth of Cu2O onto Si is an unexpected result, because there is a strong driving force for the oxidation of Si to form a native amorphous SiO2 layer. The Cu2O films are single-crystalline in nature, with little or no fiber texture. High-resolution X-ray diffraction shows that the very large lattice mismatch of -21.4% is reduced to +11.2% by the formation of a Cu2O(001)[100]HSi(001)[110] orientation relationship, in which the film is rotated 45degrees around the common [001] axis. Cross-sectional transmission electron microscopy studies suggest that the growth mechanism involves an initial electroless deposition Of Cu2O epitaxial seeds in direct contact with the Si(001), with the concomitant oxidation of Si to form a layer of amorphous SiO2 about 3 nm thick.. Electrochemical deposition Of Cu2O then proceeds on the epitaxial seeds, with the deposit growing not only perpendicular to the surface, but also laterally across the SiO2 interlayer. This type of lateral overgrowth is used in the production of semiconductor-on-insulator (SOI) structures to avoid defects due to misfit strains.

Optimizing the Growth of Cosi2 Film with Oxide-Mediated Cosi2 Template by Silicon Cap Layer

Growth of Oxide-Mediated Ternary Silicide Controlled by A Si Cap Layer by Rapid Thermal Annealing

Epitaxial-Growth Of Cosi2 On Both (111) Si And (100) Si Substrates By Multistep Annealing Of A Ternary Co/Ti/Si System

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction

Growth of Epitaxial CoSi2 on SIMOX Material by a Solid-Phase Reaction of Deposited TiN/Co/Ti Layers

The Effect Of Amorphous Si On The Epitaxial Growth Of Cosi2 By Co/Si/Ti/Si Solid State Epitaxy

Epitaxial Growth Of Cosi2 Film By Co/A-Si/Ti/Si(100) Multilayer Solid State Reaction

CoSi2 Formation Using Ti-capping Layer

Growth of epitaxial CoSi2 films on Si(1 0 0) substrates through direct solid phase reaction between crystalline Co films and Si substrates

<title>Preparation of CoSi<formula><inf><roman>2</roman></inf></formula> using microwave hydrogen plasma annealing</title>

Epitaxial growth of CoSi 2 film by Co Õa-SiÕTiÕSi„100... multilayer solid state reaction

Preparation of CoSi2 using microwave hydrogen plasma annealing

Formations and Morphological Stabilities of Ultrathin Cosi2 Films

Preferential Growth of Cosi2 in Co/Si Solid-State Interaction by Rapid Thermal Annealing

Epitaxial growth of CoSi2 by Co/C/Si solid phase epitaxy

Epitaxil Electrodeposition Of A Crystalline Metal Oxide Onto Single-Crystalline Silicon

Epitaxial Electrodeposition of a Crystalline Metal Oxide onto Single-Crystalline Silicon

Epitaxial growth of CoSi2 films by solid state reaction of Co/Ti/Si

Surface and interface morphology of CoSi2 films formed by multilayer solid-state reaction

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction