Abstract:With the development of the ultra-large scale integrated circuit (ULSI) technology, CoSi2 has become a leading candidate for contact materials in electronic devices due to its linewidth-independent low resistivity and small lattice mismatch with Si substrate [1]. Among many methods to fabricate epitaxial CoSi2 films, solid phase epitaxy (SPE) is a very important one [2]. Ti-interlayer mediated epitaxy (TIME) [3] and oxide mediated epitaxy (OME) [4] can be regarded as improvements of SPE. In SPE, the Co film is usually deposited at room temperature and the as-deposited Co films are usually amorphous [2, 5]. During low temperature annealing, the crystallization of Co film can be observed; yet during high temperature annealing, especially rapid thermal annealing (RTA), this process cannot be observed [5]. So in high temperature RTA, we cannot tell whether the Co film has undergone crystallization before the formation of silicides. This fact suggests that the formation of silicides during high temperature RTA may be the result of the reaction between amorphous Co film and Si substrate, not the reaction between crystalline Co film and Si substrate. Based on this consideration, we expect the reaction between real crystalline Co film and Si substrate to produce some results different from previous reports. Si(111) substrate was chosen because the epitaxial growth of CoSi2 film on Si(111) is not so complicated as that on Si(100). The purpose of this letter is to study the reaction between crystalline Co film and Si(111) substrate. n-Typed Si(111) with a resistivity of 4‐4.8� · cm were ultrasonically cleaned in acetone, rinsed in deionized water, etched in HF : H2O2(1 : 1), rinsed in deionized water again, and then loaded into the e-gun evaporation system. The base pressure of the system was 1.2 × 10 −8 Torr. During the deposition process, the vacuum level was 2.3 × 10 −7 Torr. Crystalline Co films of 150 nm thickness were obtained by heating the substrate to 150 ◦ C during the e-gun evaporation. Subsequent ex situ RTA was carried out in a high vacuum of 3.0 × 10 −6 Torr at temperatures between 470 and 850 ◦ C for 3 min. X-ray diffraction (XRD) was used to investigate the phases and their preferential orientations formed during the Co-Si reaction. The composition of the film was analyzed by auger electron spectroscopy(AES) and the crystalline properties of CoSi2 films were evaluated by reflection high-energy electron diffraction (RHEED).

<title>Preparation of CoSi<formula><inf><roman>2</roman></inf></formula> using microwave hydrogen plasma annealing</title>

Preparation of CoSi2 using microwave hydrogen plasma annealing

Preparation of CoSi2 Thin Film by Microwave Plasma Annealing

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Fabrication of TiSi 2 using microwave hydrogen plasma annealing

Effects of Annealing Temperature on Magnetic Properties of Co Thin Films on Si (100)

Effect of Sputtering Input Powers on Cosi2 Thin Films Prepared by Magnetron Sputtering

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction

Study on the solid state reaction between crystalline Co film and Si(1 1 1) substrate

Microstructure Evolution of Cobalt Coating Electroless Plated on SiC Whisker During Electroless Plating and Heat Treatment

Growth of Oxide-Mediated Ternary Silicide Controlled by A Si Cap Layer by Rapid Thermal Annealing

Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source

Formation and Characterization of Spe Grown Ultra-Thin Cobalt Disilicide Film

Epitaxial-Growth Of Cosi2 On Both (111) Si And (100) Si Substrates By Multistep Annealing Of A Ternary Co/Ti/Si System

High temperature annealing of hydrogenated amorphous silicon carbide thin films

Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction

Annealing Effect on the Characteristics of Co40Fe40W10B10 Thin Films on Si(100) Substrate

Synthesis of nanostructured SiC films by plasma enhanced chemical vapor deposition with hydrogen diluted hexalmethyldisiloxane as precursor

Solid phase reaction between crystalline, (002) oriented Co film and Si(111) substrate: Preferential orientations of silicides

Formations and Morphological Stabilities of Ultrathin Cosi2 Films

Preferential Growth of Cosi2 in Co/Si Solid-State Interaction by Rapid Thermal Annealing

&lt;title&gt;Preparation of CoSi&lt;formula&gt;&lt;inf&gt;&lt;roman&gt;2&lt;/roman&gt;&lt;/inf&gt;&lt;/formula&gt; using microwave hydrogen plasma annealing&lt;/title&gt;