Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source

D.H. Zhu,Y.G. Chen,B.X. Liu

DOI: https://doi.org/10.1016/0168-583X(95)00478-5

1995-01-01

Abstract:CoSi2 was formed by metal vapor vacuum are ion implantation in both crystalline silicon and crystalline silicon deposited with a thin Co film. When the Si(lll) wafers were implanted by Co ions at an extracted voltage of 40 kV with a current density of 100 and 152 mu A/cm(2) to a fixed nominal dose of 2 X 10(17)/cm(2), a continuous CoSi2 layer was formed and the resistivities were in the range of 14-20 mu Omega cm. When the Si wafers deposited with a Co film were implanted by Co ions at an extracted voltage of 20 kV with a current density of 100 mu A/cm(2) to a dose ranging from 2 X 10(17)/cm(2) to 6 x 10(17)/cm(2), several Co-silicides were observed. Increasing the implanted dose or post-implantation annealing facilitated Co consumption and the transition from Go-rich silicide to CoSi2.