Abstract:The formation of titanium silicides has been studied using simultaneous in situ x-ray diffraction with millisecond time resolution and sheet resistance measurements. The effect of a Mo interposed layer between Ti films and Si substrate was investigated by varying the thickness of the Mo interlayer from 0 (Ti/Si) to 1.8 nm (Ti/Mo/Si). The thickness of Ti was kept to 55 nm for all samples. Both isothermal annealing and ramp annealing in helium were performed in order to study the mechanism of silicide formation. While C49 TiSi2 was the only disilicide found after annealing Ti/Si at 650 °C for 20 min, C54 TiSi2 was readily formed in the presence of Mo. The formation of C49 TiSi2 was not observed with a 1.8 nm thick Mo interlayer. Instead, there was indication that C40 (Mo,Ti)Si2 was formed. In addition, broad diffraction peaks, weak in intensity, could be all assigned to Ti5Si4. However, the presence of Ti5Si4 alone did not induce the formation of C54 TiSi2. Even with a 20 °C increase in isothermal annealing temperature to 670 °C for 20 min, the presence of Mo was found to be a necessity for the formation of C54 TiSi2. When annealed in nitrogen, instead of helium, the formation of surface titanium nitride competes with the formation of silicides. The formation of C54 TiSi2 was even suppressed in the sample with a 1.8 nm Mo interlayer when annealed at 650 °C in nitrogen. The formation of Ti5Si4 and the role it plays in the formation of other silicides (C40, C49, and C54) are discussed on the basis of simple crystallographic considerations. The effect of a Mo interlayer and/or ramp-rate on the formation of C40 (Mo,Ti)Si2 and C49 TiSi2 is discussed in conjunction with variations of the preferential orientation of C54 TiSi2 films.

Formation of Ti Silicides by Metal-Vapor Vacuum Arc Ion Source Implantation

Ti–Si Compounds Formation by High-Current Ion Implantation

Formation of Ti-Si compound by metal vapor vacuum arc ion source

C54-Tisi2 Formed by Direct High-Current Ti-Ion Implantation

High Current Metal-Ion Implantation to Fabricate Metal Silicides

Formation of Zr-disilicide by high-current Zr ion implantation into Si using metal vapor vacuum arc ion source

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Formation of TaSi2 and associated fractal growth on Si surface upon high current pulsed Ta-ion implantation

Synthesis of Continuous SmSi2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

Direct Synthesis of Continuous Sm Disilicide Films by Sm-ion Implantation Using a Metal Vapour Vacuum Arc Ion Source

Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source

In Situ Characterization of Titanium Silicide Formation: the Effect of Mo Interlayer, Temperature Ramp-Rate, and Annealing Atmosphere

Synthesis of Β- and Α-Fesi2 Phases by Fe Ion Implantation into Si Using Metal Vapor Vacuum Arc Ion Source

Cosi2 Formation by High Current Ion Implantation with A Metal Vapor Vacuum Arc Ion Source

Implantation of Carbon to Stabilize TiSi2 During Thermal Annealing

Low Temperature Synthesis of Β-Sic by a Metal Vapor Vacuum Arc Ion Source

Rare Earth Metal Silicides Synthesized by High Current Metal Ion Implantation

A Preliminary-Study of the Formation of Wsi2 by High-Current W-Ion Implantation

Synthesis Of Beta-Fesi2 And Alpha-Fesi2 Phases By Fe Ion-Implantation Into Si Using Metal Vapor Vacuum-Arc Ion-Source

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces