Abstract:Dense arrays of high aspect ratio Si micro-pyramids have been formed by cumulative high intensity laser irradiation of doped Si wafers in an SF6 environment. A comparative study using nanosecond (XeCl, 308 nm) and femtosecond (Ti: Sapphire, 800 nm and KrF, 248 nm) laser pulses has been performed in this work. The influence of pulse duration and ambient gas pressure (SF6) is also presented. Scanning electron microscopy has shown that upon laser irradiation conical features appear on the Si surface in a rather homogenous distribution and with a spontaneous self alignment into arrays. Their lowest tip diameter is 800 nm; while their height reaches up to 90 μm. Secondary tip decoration appears on the surface of the formed spikes. Areas of 2×2 mm2 covered with Si cones have been tested as cold cathode field emitters. After several conditioning cycles, the field emission threshold for the studied Si tips is as low as 2 V/μm, with an emission current of 10−3 A/cm2 at 4 V/μm. Even though these structures have smaller aspect ratios than good quality carbon nanotubes, their field emission properties are similar. The simple and direct formation of field emission Si arrays over small pre-selected areas by laser irradiation could lead to a novel approach for the development of electron sources.

Formation of TaSi2 and associated fractal growth on Si surface upon high current pulsed Ta-ion implantation

Formation of MoSi2 and associated fractal growth on Si surface upon high current pulsed Mo-ion implantation

Formation of the Ersi2 Phase and the Associated Fractal Pattern on the Si Surface Upon High Current Er-Ion Implantation

Structural and Morphological Evolution Emerging in Si Surface Layers Upon High-Current Tb-Ion Implantation

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Formation of Ti Silicides by Metal-Vapor Vacuum Arc Ion Source Implantation

Pattern Evolution of NiSi2 on Si Surface Upon High Current Pulsed Ni Ion Implantation

Ti–Si Compounds Formation by High-Current Ion Implantation

Formation of Ti-Si compound by metal vapor vacuum arc ion source

C54-Tisi2 Formed by Direct High-Current Ti-Ion Implantation

Pattern evolution during the growth of CrSi2 layers on Si (111) upon high current pulsed Cr ion implantation

Formation of Lasi2-X Layers on Si by High-Current La Ion Implantation

Fabrication of Prsi2 Layers and Associated Morphology on Si Surface by A Single-Step High Current Pr-Ion Implantation

Rare Earth Metal Silicides Synthesized by High Current Metal Ion Implantation

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Synthesis of Continuous SmSi2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Formation of Ndsi2 Phase by High-Current Nd-Ion Implantation

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Direct Synthesis of Continuous Sm Disilicide Films by Sm-ion Implantation Using a Metal Vapour Vacuum Arc Ion Source

High Current Metal-Ion Implantation to Fabricate Metal Silicides