Abstract:We report, in this paper, the formation of Ti–Si compounds by direct Ti-ion implantation into silicon substrates with a metal vapor vacuum arc ion source. Implantation was conducted with an extract voltage of 40kV. The implantation doses were 1×1017, 2×1017 and 5×1017cm2 and the substrate temperature ranged from 450°C to 640°C. The obtained Ti–Si compounds varied with the change of the implantation dose and the substrate temperature. With the increase of both implantation dose and temperature, the formation of C54-TiSi2 phase was favored. When the implantation dose was increased to 1×1018cm2 and the implantation was conducted at 640°C, pure C54-TiSi2 phase was fabricated.

Ti–Si Compounds Formation by High-Current Ion Implantation