Abstract:Metal Vapor Vacuum Are (MEVVA) ion implantation was employed to synthesize NiSi2 layers on Si(100) wafers and was conducted at a voltage of 45 kV with various current densities to a fixed dose of 2 x 10(17) ions/cm(2), required by the chemical stoichiometry. From a thermal expansion calculation, there would be no size mismatch between NiSi2 and Si lattices at 380 degrees C. A current density of 35 mu A/cm(2) was required, according to an estimation, to heat the wafers to 380 degrees C. Implanting with this selected current density, a unique NiSi2 layer was indeed obtained with a resistivity as low as 14+/-2 mu Omega cm. Furthermore, a temperature dependence of the resistivity was observed and the NiSi2 layers formed at temperatures deviated from the zero-mismatch temperature featured greater resistivities than that of the layer synthesized at 380 degrees C. The experimental results are reported in detail together with a discussion of the observed temperature dependence. (C) 1999 Elsevier Science B.V. All rights reserved.

Formation of N-Type Crsi2 Semiconductor Layers on Si by High-Current Cr Ion Implantation

CrSi2 films synthesized by high current Cr ion implantation and their physical properties

Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

Formation of Ndsi2 Phase by High-Current Nd-Ion Implantation

Pattern evolution during the growth of CrSi2 layers on Si (111) upon high current pulsed Cr ion implantation

Cosi2 Formation by High Current Ion Implantation with A Metal Vapor Vacuum Arc Ion Source

Fabrication of Prsi2 Layers and Associated Morphology on Si Surface by A Single-Step High Current Pr-Ion Implantation

High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivity

Formation of Lasi2-X Layers on Si by High-Current La Ion Implantation

High Current Metal-Ion Implantation to Fabricate Metal Silicides

C54-Tisi2 Formed by Direct High-Current Ti-Ion Implantation

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Continuous Cosi2 Layers in Silicon Synthesized by Co-Ion Implantation

Formation of Zr-disilicide by high-current Zr ion implantation into Si using metal vapor vacuum arc ion source

Formation of Ysi2-X Layers on Si by High-Current Y Ion Implantation

Ti–Si Compounds Formation by High-Current Ion Implantation

Structure Study of SiC Buried Layer by High Temperature C + Implantation

Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source

Epitaxial Cosi2 Layers Fabricated by A Single-Step Technique of High-Current Co-Ion Implantation

Growth of DySi2Layers on Si Surface by High-Current Dy-Ion Implantation

Low temperature ion beam synthesis of NiSi2 layers with fine electrical property