Abstract:Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi by ion irradiation of Si (~5 nm)/Ni(~15 nm)/Si, grown under ultrahigh vacuum environment. Irradiation was carried out at room temperature with 1 MeV Si+ ions. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed for analysis. With increasing ion fluence ion beam mixing occurs and more and more Si is incorporated into the Ni layer and this layer gets amorphized. At an even higher fluence a recrystallized uniform nickel monosilicide ({\eta}-NiSi) layer is formed. Several planar spacings of different Miller indices of {\eta}-NiSi have been observed in XRD and TEM. Additionally, an oscillatory amorphization and recrystallization has been observed in the substrate Si with increasing ion fluence. To our knowledge, this has never been observed in ion irradiation of bare Si in decades of work in this area. The oscillatory amorphization/recrystallization in Si is apparently Ni-induced. Irradiation displaces Ni and produces a distribution of Ni in amorphized Si. Irradiation at a higher fluence produces two recrystallized Si bands in amorphous Si with concomitant accumulation of Ni at the amorphous/crystalline interfaces. On further increase of irradiation fluence the recrystallized Si bands again pass through amorphization and recrystallization. The total thickness of recrystallized as well as amorphous Si shows an oscillatory behavior as a function of ion fluence.

Low temperature ion beam synthesis of NiSi2 layers with fine electrical property

High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivity

Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

Zero-Mismatch Temperature Synthesis of Nisi2 by A Metal Vapor Vacuum Arc Ion Source

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Silicon nano-wires grown at low temperature

Linear Growth of Ni2si Thin Film on N+/P Junction at Low Temperature

Nanoscale η-NiSi formation via ion irradiation of Si/Ni/Si

Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

Thermal stability and electrical characteristics of NiSi films with electroplated Ni(W) alloy

Formation of Lasi2-X Layers on Si by High-Current La Ion Implantation

Formation of Ndsi2 Phase by High-Current Nd-Ion Implantation

High Current Metal-Ion Implantation to Fabricate Metal Silicides

Thermal Stability and Interface Improvement of Thin Nisige by C+ Ion Implantation

CrSi2 films synthesized by high current Cr ion implantation and their physical properties

Synthesis of Continuous SmSi2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

Epitaxial growth of NiSi 2 induced by sulfur segregationat the NiSi 2 /Si(100) interface

Effect of erbium interlayer on nickel silicide formation on Si(100)

Formation of N-Type Crsi2 Semiconductor Layers on Si by High-Current Cr Ion Implantation

Effect of A Ge Interlayer on the High-Temperature Behavior of Nisi Films

Pattern Evolution of NiSi2 on Si Surface Upon High Current Pulsed Ni Ion Implantation