Abstract:Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi by ion irradiation of Si (~5 nm)/Ni(~15 nm)/Si, grown under ultrahigh vacuum environment. Irradiation was carried out at room temperature with 1 MeV Si+ ions. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed for analysis. With increasing ion fluence ion beam mixing occurs and more and more Si is incorporated into the Ni layer and this layer gets amorphized. At an even higher fluence a recrystallized uniform nickel monosilicide ({\eta}-NiSi) layer is formed. Several planar spacings of different Miller indices of {\eta}-NiSi have been observed in XRD and TEM. Additionally, an oscillatory amorphization and recrystallization has been observed in the substrate Si with increasing ion fluence. To our knowledge, this has never been observed in ion irradiation of bare Si in decades of work in this area. The oscillatory amorphization/recrystallization in Si is apparently Ni-induced. Irradiation displaces Ni and produces a distribution of Ni in amorphized Si. Irradiation at a higher fluence produces two recrystallized Si bands in amorphous Si with concomitant accumulation of Ni at the amorphous/crystalline interfaces. On further increase of irradiation fluence the recrystallized Si bands again pass through amorphization and recrystallization. The total thickness of recrystallized as well as amorphous Si shows an oscillatory behavior as a function of ion fluence.

High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivity

Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

Low temperature ion beam synthesis of NiSi2 layers with fine electrical property

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

High Current Metal-Ion Implantation to Fabricate Metal Silicides

Formation of Zr-disilicide by high-current Zr ion implantation into Si using metal vapor vacuum arc ion source

Zero-Mismatch Temperature Synthesis of Nisi2 by A Metal Vapor Vacuum Arc Ion Source

Nanoscale η-NiSi formation via ion irradiation of Si/Ni/Si

Cosi2 Formation by High Current Ion Implantation with A Metal Vapor Vacuum Arc Ion Source

Formation of Lasi2-X Layers on Si by High-Current La Ion Implantation

Continuous Cosi2 Layers in Silicon Synthesized by Co-Ion Implantation

Formation of Ndsi2 Phase by High-Current Nd-Ion Implantation

Formation of N-Type Crsi2 Semiconductor Layers on Si by High-Current Cr Ion Implantation

Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

Thermal Stability and Interface Improvement of Thin Nisige by C+ Ion Implantation

Amorphization Implant Technology in NiSi SALICIDE Process

Pattern Evolution of NiSi2 on Si Surface Upon High Current Pulsed Ni Ion Implantation

Linear Growth of Ni2si Thin Film on N+/P Junction at Low Temperature

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Preparation of Nisi2 Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures