Abstract:Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi by ion irradiation of Si (~5 nm)/Ni(~15 nm)/Si, grown under ultrahigh vacuum environment. Irradiation was carried out at room temperature with 1 MeV Si+ ions. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed for analysis. With increasing ion fluence ion beam mixing occurs and more and more Si is incorporated into the Ni layer and this layer gets amorphized. At an even higher fluence a recrystallized uniform nickel monosilicide ({\eta}-NiSi) layer is formed. Several planar spacings of different Miller indices of {\eta}-NiSi have been observed in XRD and TEM. Additionally, an oscillatory amorphization and recrystallization has been observed in the substrate Si with increasing ion fluence. To our knowledge, this has never been observed in ion irradiation of bare Si in decades of work in this area. The oscillatory amorphization/recrystallization in Si is apparently Ni-induced. Irradiation displaces Ni and produces a distribution of Ni in amorphized Si. Irradiation at a higher fluence produces two recrystallized Si bands in amorphous Si with concomitant accumulation of Ni at the amorphous/crystalline interfaces. On further increase of irradiation fluence the recrystallized Si bands again pass through amorphization and recrystallization. The total thickness of recrystallized as well as amorphous Si shows an oscillatory behavior as a function of ion fluence.

Amorphization Implant Technology in NiSi SALICIDE Process

Nickel Induced Crystallization of Amorphous Silicon Thin Films

The Effects of Extended Heat Treatment on Ni Induced Lateral Crystallization of Amorphous Silicon Thin Films

Nanoscale η-NiSi formation via ion irradiation of Si/Ni/Si

A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2

Nickel Silicidation On Sulfur Implanted Si(100)

Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni–Si solid-state reaction

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

Linear Growth of Ni2si Thin Film on N+/P Junction at Low Temperature

Simultaneous Planar Growth of Amorphous and Crystalline Ni Silicides

Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivity

Nickel Silicide Formation on Shallow Junctions

Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy

Nickel Induced Phase Separation and Nanocrystal Growth in Si-Rich Silica Films

Study On The Crystallization Process Of Ni-P Amorphous Alloy

Thermal Stability and Interface Improvement of Thin Nisige by C+ Ion Implantation

Microstructural evolution of wet deposited nickel interfacial phases on phosphorus doped silicon surface

Annealing Process Influence And Dopant-Silicide Interaction In Self-Aligned Nisi Technology