Abstract:Nickel silicide has many advantages, such as low resistivity and low formation temperature; therefore, it has been widely used in the fields of solar cells, transistors and complementary metal-oxidesemiconductor (CMOS) devices. To obtain high-quality nickel-silicide thin film, solid-state reaction is a convenient and efficient fabrication method. For better understanding of the dynamic formation mechanism, we used in-situ transmission electron microscopy (TEM) to record the diffusion behavior during the heating process. In this work, three-steps annealing process to synthesize different nickel silicides corresponding to the various formation temperatures were investigated systematically. At 250 °C, the product of the first-step annealing was inverted-triangle Ni2Si, embedded in the Si substrate. Then, well-distributed NiSi thin film was synthesized, having the lowest resistivity among Ni-Si system at 400 °C. Finally, NiSi2, a Si-rich product, would form during the third-step annealing at 600 °C. NiSi2 product and Si substrate have small lattice mismatch; thus, the epitaxial relationship would be observed. We provide the evidence of diffusion behaviors and structural identification of Ni-Si system. Furthermore, these results are beneficial for the formation of specific nickel silicides, which is expected to optimize the fabrication of microelectronics.

Preparation of Nisi2 Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires

Ultralong Single-Crystal Metallic Ni<sub>2</sub>Si Nanowires with Low Resistivity

Ni2Si Nanowires of Extraordinarily Low Resistivity

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Electrically Robust Ultralong Nanowires Of Nisi, Ni2si, And Ni31si12

Tiny SiO2 nano-wires synthesized on Si (111) wafer

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Tiny SiO2 nano-wires synthesized on Si (1 1 1 ) wafer

Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

Tiny silicon nano-wires synthesis on silicon wafers

In-Situ Observation of the Formation of NiSi/Ni<sub>2</sub>Si Heterojunction in SiGe Nanowire with Al<sub>2</sub>O<sub>3</sub> Diffusion Barrier Layer

Preparation Of Silicon Nanowires Under High Pressure

Silicon nano-wires grown at low temperature

OS1503 Development of Highly Ordered Silicon Nanowire Array

Synthesis and properties of single-crystal β3-Ni3Si nanowires

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivity

Linewidth Related Resistivities and Growth Behavior of Nickel Silicide Nanowires by Solid State Reaction Between Ni and Electron-Beam Lithography Prepared Si Nanowires