Abstract:Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi by ion irradiation of Si (~5 nm)/Ni(~15 nm)/Si, grown under ultrahigh vacuum environment. Irradiation was carried out at room temperature with 1 MeV Si+ ions. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed for analysis. With increasing ion fluence ion beam mixing occurs and more and more Si is incorporated into the Ni layer and this layer gets amorphized. At an even higher fluence a recrystallized uniform nickel monosilicide ({\eta}-NiSi) layer is formed. Several planar spacings of different Miller indices of {\eta}-NiSi have been observed in XRD and TEM. Additionally, an oscillatory amorphization and recrystallization has been observed in the substrate Si with increasing ion fluence. To our knowledge, this has never been observed in ion irradiation of bare Si in decades of work in this area. The oscillatory amorphization/recrystallization in Si is apparently Ni-induced. Irradiation displaces Ni and produces a distribution of Ni in amorphized Si. Irradiation at a higher fluence produces two recrystallized Si bands in amorphous Si with concomitant accumulation of Ni at the amorphous/crystalline interfaces. On further increase of irradiation fluence the recrystallized Si bands again pass through amorphization and recrystallization. The total thickness of recrystallized as well as amorphous Si shows an oscillatory behavior as a function of ion fluence.

Pattern Evolution of NiSi2 on Si Surface Upon High Current Pulsed Ni Ion Implantation

Pattern evolution during the growth of CrSi2 layers on Si (111) upon high current pulsed Cr ion implantation

Formation of MoSi2 and associated fractal growth on Si surface upon high current pulsed Mo-ion implantation

Formation of the Ersi2 Phase and the Associated Fractal Pattern on the Si Surface Upon High Current Er-Ion Implantation

Formation of TaSi2 and associated fractal growth on Si surface upon high current pulsed Ta-ion implantation

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Nanoscale η-NiSi formation via ion irradiation of Si/Ni/Si

Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivity

Formation of Ndsi2 Phase by High-Current Nd-Ion Implantation

Amorphization Implant Technology in NiSi SALICIDE Process

Low temperature ion beam synthesis of NiSi2 layers with fine electrical property

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

Nanopatterning of Si(110) Surface by Ion Sputtering: an Experimental and Simulation Study

Fabrication of Prsi2 Layers and Associated Morphology on Si Surface by A Single-Step High Current Pr-Ion Implantation

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Patterned growth of self-assembled silicon nanostructures by ion implantation and electron beam annealing

Surface Morphology Evolution of Si(110) by Ion Sputtering As A Function of Sample Temperature

Temperature and high fluence induced ripple rotation on Si(100) surface

Growth of DySi2Layers on Si Surface by High-Current Dy-Ion Implantation