Surface Morphology Evolution of Si(110) by Ion Sputtering As A Function of Sample Temperature

LJ Qi,L Li,WQ Li,XJ Yang,CX Gu,M Lu
DOI: https://doi.org/10.1088/1009-1963/14/8/029
2005-01-01
Abstract:Si(110) surface morphology evolution under normal-incident Ar+ ion sputtering has been studied as a function of Si temperature with the ion energy of 1.5keV and the ion flux 20 mu A/cm(2). During temperature rising from room temperature to 800 degrees C, Si(110) surface morphology changes from a dim dot/hole pattern to a distinct dot one, meanwhile the surface roughness increases steadily. The usually-accepted Bradley-Harper model fails to explain these data. By taking into account the Ehrlich-Schwoebel effect in the nanostructuring process, a simulation work was conducted based on a continuum dynamic model, which reproduces the experimental results.
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