Ion-Sputter-Induced Nanodots on Si(110): Ion Energy Dependence

WQ Li,L Ling,LJ Qi,XJ YAng,WB Fan,CX Gu,M Lu
DOI: https://doi.org/10.1088/0256-307x/22/4/039
2005-01-01
Abstract:Nanodot arrays were formed on Si(110) surface under normal-incident Ar+ ion sputtering at substrate temperature of 800 degrees C. The ion flux was 20 mu A/cm(2), and the ion energies were 1-5keV. The surface was imaged by an atomic force microscope (AFM). It was found that with the increasing ion energy, the average ellipticity of the dots changes in an oscillating manner; meanwhile the average dot size increases monotonously. Based on a dynamic continuum model, and taking into consideration the asymmetry of the Ehrlich-Schwoebel diffusions along the (100) and (110) crystallographic directions, we carry out the simulations, which reproduce the experimental results qualitatively.
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