Abstract:<p>We use molecular dynamics (MD) methods to study collision cascades in cubic silicon carbide (3C-SiC), which is a candidate for various applications in nuclear industries. One Tersoff potential, which can reproduce the thermal and elastic properties of 3C-SiC, was firstly connected with ZBL potential. Collison cascades were generated by primary knock-on atoms (PKA) with damage energies ranging between 1 keV and 10 keV at 300-1800 K. It was found that the temperature weakly influence the production of defects in the temperature range (300-1800 K). However, the number of point defects increases significantly as the PKA-energy increases. Carbon defects dominate most of the defects formed in collision cascades, and the dominance becomes less significant with the increase of temperature. Some high-density interstitial point defects were observed in the evolution of the collision cascade. As the PKA-energy increases, more and more defect clusters with larger sizes can be observed. For the current PKA energy range (≤ 10 keV), clusters with 1∼5 vacancies and with 1∼4 interstitials can be found, and clusters with a larger size are rare at the end of the quenching stage. The number of these defect clusters with various sizes is temperature independent. In these defect clusters, the carbon content exceeds 50% in most conditions. In addition, the carbon ratio in interstitial clusters is usually higher than the carbon site ratio in vacancy clusters. This work not only enriches the knowledge of the the number, size distribution and compositions of point defects and their clusters induced by neutron irradiation, but also can be input for the long-term simulation methods to understand the evolution of irradiated defects in 3C-SiC. Furthermore, the defect information can be used to study the thermal and elastic properties of 3C-SiC in future work.</p>

Large-scale Molecular Dynamics Simulation for Two Ar Clusters Impact on 4H–sic

Surface Damages on Silicon Surfaces Created by Large Silica Cluster Impacts: Molecular Dynamics Simulation

Molecular Dynamics Simulation of Atomic Beam Bombardment on a Solid Surface

Energy transfer under impact load studied by molecular dynamics simulation

Extrusion Formation Mechanism On Silicon Surface Under The Silica Cluster Impact Studied By Molecular Dynamics Simulation

Deposition of an Energetic Al Cluster on Si(111) Substrate: A Molecular Dynamics Simulation

A Molecular Dynamics Study of Silica Cluster Cutting Single Crystalline Silicon Asperity

Distribution of defect clusters in the primary damage of ion irradiated 3C-SiC

Study on sputtering of gas cluster ion beams

Formation and Emission Mechanisms of Ag Nanoclusters in the Ar Matrix Assembly Cluster Source

Phase Transformation During Silica Cluster Impact on Crystal Silicon Substrate Studied by Molecular Dynamics Simulation

Effects of Environment on the Electron-Impact Ionization Dynamics of Argon Clusters

Molecular dynamics simulation of gold cluster growth during sputter deposition

A density functional tight-binding based strategy for modeling ion bombardment and its application to Ar bombardment of silicon nitride

Kinetic Monte Carlo Simulation Study of the Early Stages of Epitaxial SiC (0001) Growth

Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

Dynamic behavior of clusters in the early stage of SiC (0001) epitaxial growth: A Kinetic Monte Carlo study

Size Effects of Brittle Particles in Aerosol Deposition—Molecular Dynamics Simulation

Molecular dynamics simulation of displacement cascades in cubic silicon carbide

Nanopatterning of Si(110) Surface by Ion Sputtering: an Experimental and Simulation Study