Deposition of an Energetic Al Cluster on Si(111) Substrate: A Molecular Dynamics Simulation

H Li,ZN Xia,H Zhang,JY Feng,YW Lu
DOI: https://doi.org/10.1088/0965-0393/6/6/003
IF: 2.421
1998-01-01
Modelling and Simulation in Materials Science and Engineering
Abstract:A molecular dynamics simulation on the deposition of an energetic Al cluster on Si(111) substrate was studied. We employed the Stillinger-Weber three-body potential to simulate the Si substrate and the Born-Mayer-Higgins potential to compute the interactions between cluster and substrate. For one impacting Al cluster, the migration distance of the cluster atoms and the deposition morphology were investigated under different substrate temperatures, impacting cluster energies and cluster sizes. It can be found that diffusion distance increases with the increasing substrate temperature, cluster energy and cluster size; moreover the deposition morphologies also change under similar conditions.
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